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  • Physics  (2)
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  • Physics  (2)
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  • 1
    Online Resource
    Online Resource
    Thermal transport properties of rolled graphene nanoribbons
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 7 ( 2013-08-12)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 7 ( 2013-08-12)
    Abstract: Using nonequilibrium Green's function method, we investigate the influence of the curvature and edge effects on the thermal transport during the process of rolling graphene nanoribbons (GNRs) into carbon nanotubes (CNTs) in the transverse direction. The curvature effect results in a slight decrease in the thermal conductance of GNRs, which is remarkably different from that in the longitudinal direction. The curvature and edge effects show a strong size and chirality dependence, while the curvature effect is more sensitive to the size. When the size equals to 12.8 nm (49.2 nm) with the zigzag (armchair) edge, the edge effect results in the reduction of thermal conductance of 2.4% (13.0%) as compared to the corresponding CNT, but the curvature effect vanishes.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4818658
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Dual-donor codoping approach to realize low-resistance n -type ZnS semiconductor
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 99, No. 5 ( 2011-08-01)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 99, No. 5 ( 2011-08-01)
    Abstract: Based on first-principles calculations, we explored a good candidate for achieving low-resistance and high carrier concentration of n-type ZnS by a dual-donor codoping method, where the ionization energy was effectively reduced. We found that the SnZn-FS pair has a shallow donor level of 17.2 meV, a small formation energy of 1.27 eV and a high binding energy of 1.28 eV. The density of states analysis showed that the SnZn-FS pair induces the downward shift of the conduction band minimum by about 0.15 eV, while the basis electronic structure does not change. Thus, the SnZn-FS pair is likely to be a best n-type dopant for ZnS.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3624531
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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