In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 6R ( 2010-06-01), p. 060215-
Kurzfassung:
The change in the spatial distribution of oxygen ions after an initial voltage application called the forming process was investigated for oxide resistance switching devices by secondary ion mass spectrometry mapping. To track the motion of oxygen ions, tracer 18 O ions were implanted in a planar Pt/CuO/Pt device. We found clear evidence for the oxygen reduction in the conductive bridge structure formed between two electrodes. In addition, the oxygen ions in the bridge structure drift to the anode, implying the oxygen diffusion (migration) induced by high electric field and/or current density. We discuss those results in terms of a filament model.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.060215
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2010
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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