In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 18 ( 2004-11-01), p. 3995-3997
Abstract:
Inductively coupled plasma reactive ion etching (ICPRIE) was used to etch rib the waveguide and U groove to achieve the integration of self-alignment connection between single mode fiber and rib waveguide in silicon-on-insulator (SOI) wafer. Interface roughness is one of the consequences of an ICPRIE process. Endface roughness, surface roughness, and sidewall roughness result in increasing scattering losses for waveguides. A series of atomic force microscope measurements were carried out to demonstrate the root-mean-square (rms) roughness of SOI rib waveguide etched by ICPRIE method. According to scalar scattering theory and Tien’s theory, scattering loss induced by the rms roughness was studied systematically.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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