In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 5S ( 2016-05-01), p. 05FA03-
Abstract:
Fundamental electronic and optical properties of a low-resistivity m -plane GaN single crystal, which was grown by hydride vapor phase epitaxy on a bulk GaN seed crystal synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer, were investigated. The threading dislocation and basal-plane staking-fault densities of the crystal were around 10 4 cm −2 and less than 10 0 cm −1 , respectively. Oxygen doping achieved a high electron concentration of 4 × 10 18 cm −3 at room temperature. Accordingly, a photoluminescence (PL) band originating from the recombination of hot carriers was observed at low temperatures, even under weak excitation conditions. The simultaneous realization of low-level incorporation of Ga vacancies (V Ga ) less than 10 16 cm −3 was confirmed by using the positron annihilation technique. Consistent with our long-standing claim that V Ga complexes are the major nonradiative recombination centers in GaN, the fast-component PL lifetime of the near-band-edge emission at room temperature longer than 2 ns was achieved.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.05FA03
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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