In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 10S ( 2012-10-01), p. 10NB16-
Abstract:
Hydrogenated amorphous silicon–germanium (a-SiGe:H) solar cells are fabricated with different thicknesses of the i/n graded layer and profiling shapes for appropriate band gap profiling. Comparison of the solar parameters between the U-shape profiling and the exponential shape (E-shape) profiling has been carried out at the same total thickness. In the U-shape profiling, as the thickness of the i/n graded layer increase, the fill factor (FF) and open circuit voltage ( V oc ) of p–i–n single-junction a-SiGe:H solar cells increase, but the short circuit current ( J sc ) of cells decreases. In the E-shape profiling, the J sc of the a-SiGe:H cell is enhanced without significant losses in V oc . For further analysis, a modified E-shape profiling is incorporated in a-Si:H/a-SiGe:H double-junction cells, which has resulted in the improvement of V oc and FF of double-junction cells to 1.67 V and 0.753, respectively, without significant reduction in J scSiGe QE , 12.58 mA/cm 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.10NB16
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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