In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 1 ( 2022-01-01), p. 015009-
Abstract:
In this research, based on I – V and C – V measurement at different temperatures, the interface defect density in the device with the Si/SiGe channel was discussed. In addition, negative bias temperature instability (NBTI) is also studied. In previous research, most of the flat-band voltage ( V FB ) shifts during NBTI stress was attributed to hole injection. In this article, however, the release of atomic hydrogen from the Si–H bonds at the SiO 2 /Si interface and at the SiGe interface produces a fixed oxide charge, which causes V FB shifts which vary with material.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac3dd5
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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