In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 17, No. 4 ( 1999-07-01), p. 1526-1530
Abstract:
New chemical information has been obtained which explains “footing” and “bottom pinching” effects in chemically amplified (CA) resists on a silicon nitride surface. X-ray photoelectron spectroscopy measurements indicate that the residual alkaline molecules on the nitride surface play a major role in the formation of nitride footing. It appears that the organic contaminants are not responsible for nitride footing. O2 and N2O/SiH4 plasma treatment are used to modify the silicon nitride surface. Less severe footing is observed if the nitride surface is treated with N2O/SiH4 plasma. This is attributed to the deposition of a thin oxide cap on the nitride substrate, which suppresses the surface basicity. However, extended N2O plasma treatment causes resist bottom pinching. This is ascribed to the surface acidity of a newly formed oxide cap which enhances the CA resist development process. Results show that the N (1s) peak, after extended N2O/SiH4 plasma treatment, has shifted to a higher binding state which suggests that the nitride surface becomes acidic, causing bottom pinching.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1999
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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