In:
Applied Physics Letters, AIP Publishing, Vol. 56, No. 21 ( 1990-05-21), p. 2126-2128
Abstract:
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink