In:
International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 07, No. 28 ( 1993-12-30), p. 4815-4825
Abstract:
Exciton density in an optically excited semiconductor is calculated as a function of pumping light intensity. In a certain domain in the detuning-intensity plane there may appear bistability of exciton density which is shown considerably influenced by the presence of free carriers. The carrier-induced effect manifests itself in the modification of phase diagrams leading to changes of the hysteresis loop size in both intensity-controlled and frequency-controlled bistabilities.
Type of Medium:
Online Resource
ISSN:
0217-9792
,
1793-6578
DOI:
10.1142/S021797929300384X
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
1993
detail.hit.zdb_id:
2086681-1
detail.hit.zdb_id:
246716-1
Permalink