In:
Applied Physics Express, IOP Publishing, Vol. 16, No. 2 ( 2023-02-01), p. 021001-
Abstract:
Bipolar degradation in SiC bipolar devices, in which stacking faults (SFs) expand to accommodate the movement of partial dislocations during forward bias application, is one of the critical problems impeding the widespread implementation of SiC power devices. Here we clearly demonstrate that the movement of partial dislocations can be suppressed by proton implantation, which has good compatibility with semiconductor processing, through investigation of the contraction behavior of SFs in SiC epitaxial layers subjected to proton implantation.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/acb585
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
2417569-9
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