In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 1 ( 2022-01-01), p. 015001-
Abstract:
In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β -Ga 2 O 3 ( β -Ga 2 O 3 :Si) metal-semiconductor field-effect transistor structure is demonstrated, whose threshold voltage ( V th ) and subthreshold swing are 4.04 V and 1.4 V dec −1 , respectively. A 400 nm thick β -Ga 2 O 3 :Si thin film is prepared on sapphire substrate by using metal-organic chemical vapor deposition method. Controlling the channel currents by the Schottky gate voltage in the dark and under illuminations, the photodetector shows dark current ( I dark ) as low as 13.4 pA, photo-to-dark current ratio of 4.85 × 10 4 and linear dynamic range of 29.6 dB, illuminated by 254 nm UV light of 245 μ W cm −2 . As the UV light is turned on and off, the output current rise and decay time ( τ r and τ d ) are 420 ms and 350 ms. Moreover, at drain voltage ( V ds ) of 5 V and gate voltage ( V gs ) of 0 V, the responsivity ( R ), specific detectivity ( D* ) and external quantum efficiency are achieved as 74 A W −1 , 2.15 × 10 14 cm Hz 1/2 W −1 (Jones) and 3.6 × 10 4 %, respectively.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac38bd
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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