In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1090-
Kurzfassung:
A novel low leakage and low resistance titanium salicide process named “ s ilicidation after ion i mplantation through the c ontamination- r estrained o xygen free LPCVD- n itride layer (SICRON)” has been developed. This novel oxygen free process has been successfully implemented in deep submicron dual gate CMOS (complementary metal oxide semiconductor) development. Junction leakage current for TiSi 2 -n + /p and -p + /n was reduced to the non-silicidation level. Furthermore, low sheet resistances of n + -and p + -gate electrode were maintained below the 0.2 µm line.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1090
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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