In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 1 ( 2022-01-01), p. 015009-
Kurzfassung:
In this research, based on I – V and C – V measurement at different temperatures, the interface defect density in the device with the Si/SiGe channel was discussed. In addition, negative bias temperature instability (NBTI) is also studied. In previous research, most of the flat-band voltage ( V FB ) shifts during NBTI stress was attributed to hole injection. In this article, however, the release of atomic hydrogen from the Si–H bonds at the SiO 2 /Si interface and at the SiGe interface produces a fixed oxide charge, which causes V FB shifts which vary with material.
Materialart:
Online-Ressource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac3dd5
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2022
ZDB Id:
54647-1
ZDB Id:
1361285-2
Permalink