In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 12, No. 11 ( 1997-11), p. 2947-2951
Abstract:
For high temperature superconducting multichip modules and other related electronic applications, it is necessary to be able to fabricate several Y 1 Ba 2 Cu 3 O 7– x (YBCO) layers separated by thick low dielectric constant dielectric layers. In this work, we report the successful fabrication of YBCO/YSZ/SiO 2 (1–2 μm)/YSZ/YBCO multilayer structures on single crystal yttria stabilized zirconia (YSZ) substrates. In contrast to previously reported work, the top YBCO layer did not show any cracking. This is due to a technique that allows for stress relief in the SiO 2 layer before the second YBCO layer is deposited. The top YBCO layer in our multilayer structure had T c = 87 K and J c = 10 5 A/cm 2 (at 77 K), whereas the bottom YBCO layer had T c = 90 K and J c = 1.2 × 10 6 A/cm 2 (at 77 K). We also showed that the quality of the bottom YBCO layer was preserved during the fabrication of the multilayer due to the annealing process during which O 2 diffused into the YBCO, replacing the O 2 lost during the deposition of the top YBCO layer.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1997.0389
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1997
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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