In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 22, No. 5 ( 2007-05), p. 1214-1218
Abstract:
Al 2 O 3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH 3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al 2 O 3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al 2 O 3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH 3 -plasma-nitrided surfaces. Al 2 O 3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiO x N y inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2007.0184
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2007
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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