In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 17, No. 8 ( 2002-08), p. 2147-2152
Abstract:
BaIn 2 S 4 , BaIn 2 S 4 :Ho 3+ , BaIn 2 S 4 :Er 3+ , BaIn 2 S 4 :Tm 3+ , BaIn 2 Se 4 , BaIn 2 Se 4 :Ho 3+ , BaIn 2 Se 4 :Er 3+ , and BaIn 2 Se 4 :Tm 3+ single crystals were grown by the chemical transport reaction method. The optical energy gap of the single crystals was found to be 3.057, 2.987, 2.967, 2.907, 2.625, 2.545, 2.515, and 2.415 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Broad emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to donor–acceptor pair recombination. Sharp emission peaks were observed in the doped single crystals. They were attributed to be due to radiation recombination between the Stark levels of the Ho 3+ , Er 3+ , and Tm 3+ ions sited in C 1 symmetry.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.2002.0316
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2002
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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