In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 10, No. 9 ( 1995-09), p. 2350-2354
Abstract:
The current-voltage ( I-V ) characteristics and time-dependence photoconductivity of the undoped and B-doped diamond films (DF's) before and after annealing were investigated. The boron and hydrogen concentration in diamond films were measured by means of nuclear reaction analysis (NRA) and the elastic-recoil detection (ERD) technique, respectively. The results show that induced boron atoms and hydrogen atoms affect the electrical and photocoaductive properties of diamond films. During the annealing process, B concentration kept even, but H content decreased. For undoped diamond films, the escaping of H atoms has great effects on the electrical characteristics, but for B-doped samples, this effect decreases with the increase of B concentration.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1995.2350
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1995
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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