In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 35, No. 7 ( 2020-04-14), p. 732-737
Abstract:
A multilevel nonvolatile memory based on an amorphous indium–gallium–zinc oxide thin-film transistor is successfully demonstrated by using an atomic layer–deposited ZnO film as a charge trapping layer. The memory device shows a much higher erasing efficiency at a negative bias, i.e., after erasing at −13 V for 1 μs, the threshold voltage shift is as large as −7.4 V. In the case of 13 V/1 μs programming (P) and −12 V/1 μs erasing (E), the device demonstrates an ON/OFF readout drain current ( I DS ) ratio of ∼ 10 3 after 10 5 s, and a large and stable ON/OFF I DS ratio of ∼ 10 6 till 10 4 of P/E cycles. Furthermore, multilevel memory characteristics are also demonstrated on the device, showing an I DS ratio of 〉 10 2 for 4 different states. Additionally, the device also successfully demonstrates typical synaptic behaviors, such as excitatory and inhibitory postsynaptic current with different memory times at different memory states.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2019.355
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2020
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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