In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 5, No. 5 ( 1990-05), p. 955-970
Abstract:
A series of simulations has been performed on grain boundaries in Ni and Ni 3 Al with and without boron doping using embedded atom-style potentials. A new procedure of obtaining “reference” data for boron related properties from electronic band structure calculations has been employed. Good agreement with existing experimental structural and energetic determinations was obtained. Boron is found to segregate more strongly to grain boundaries than to free surfaces. Adding boron to grain boundaries in Ni and Ni 3 Al increases their cohesive strength and the work required to pull apart the boundary. This effect is much more dramatic for Ni-rich boundaries than for stoichiometric or Al-rich boundaries. In some Ni-rich cases, adding boron increases the cohesive strength of the boundary to such an extent that the boundaries become stronger than the bulk. Bulk Ni 3 Al samples that are Ni-rich produce Ni-rich grain boundaries. The best cohesive properties of Ni 3 Al grain boundaries are obtained when the boundary is Ni saturated and also with boron present. Boron and nickel are found to cosegregate to the grain boundaries.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1990.0955
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1990
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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