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  • 1
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    Impact of Martian Crustal Magnetic Field on the Ion Escape (2021)
    Details
    Publication Date: 2021-07-21
    Description: Based on the Mars Atmosphere and Volatile EvolutioN (MAVEN) observations, we have analyzed the role of the crustal magnetic field on ion loss driven by the direct interaction of the solar wind with the Mars ionosphere. Crustal magnetic fields significantly attenuate the ion ionospheric motions and raise the flux of returning ions. On the other hand, since the ion densities in the ionosphere with strong crustal field are significantly higher than in the ionosphere with a weak crustal magnetic field, the net escape fluxes from the ionosphere with the crustal sources remain vital. The crustal magnetic field also leads to the expansion of the ionosphere and increase of the area exposed to solar wind. As a result, fluxes from higher altitudes essentially contribute to the flow pattern in Martian tail producing an excess of ion loss rate (∼15%) through the southern part of the tail. Thus, effects of inhibition and enhancement of the escape rate by the crustal magnetic field at Mars operate in competition producing a minor influence on the total ion loss.
    Keywords: 523 ; Mars ; crustal magnetic fields ; ion escape ; ionosphere ; solar wind ; MAVEN
    Language: English
    Type: article
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    CITATION GEO-LEO
  • 2
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    Induced Magnetic Fields and Plasma Motions in the Inner Part of the Martian Magnetosphere (2021)
    Details
    Publication Date: 2022-03-24
    Description: Analysis of Mars Atmosphere and Volatile Evolution (MAVEN)/Supra‐Thermal And Thermal Ion Composition observations in the Martian upper atmosphere, bounded at higher altitudes by the shocked solar wind, shows that the draping of interplanetary magnetic field penetrates down to low altitudes (∼200−250 km) and governs dynamics of the ionosphere. The upper ionospheric plasma is driven into motion flowing around Mars similar to the shocked solar wind in the adjacent magnetosheath. Such a fluid‐like motion is accompanied by ion acceleration caused by the bending of the magnetic field, leading to ion extraction and finally to ion pickup. Extraction of ions and their acceleration produces a recoil effect of the bulk ionosphere in the opposite direction. This provides a strong asymmetry in ion dynamics in two different hemispheres, accompanied by wrapping of the magnetic field lines around Mars and respective reconnection.
    Description: Plain Language Summary: Although the Martian magnetosphere is hybrid and contains components of the induced and intrinsic magnetosphere, is possible to display these components by using the specific coordinate systems. Here we study the properties of the induced magnetosphere using the data obtained by MAVEN spacecraft. The interplanetary magnetic field penetrates deep into the Martian ionosphere draping around Mars and drive to the motion dense ionospheric plasma. Draping features and the induced plasma motions occur different in two hemispheres determined by the direction of the motional electric field in the solar wind. Ion acceleration and extraction is accompanied by a recoil effect that leads to a shift and asymmetry of the ionosphere.
    Description: Key Points: Draping of the interplanetary magnetic field around Mars penetrates deep to the ionosphere enveloping the planet and driving the ionosphere to the bulk motion. Draping and motion of the ionospheric plasma is characterized by asymmetry by the direction of the motional electric field in solar wind. Ion acceleration and extraction from the ionosphere is accompanied by a shift of the bulk ionosphere in the opposite direction.
    Description: National Aeronautics and Space Administration http://dx.doi.org/10.13039/100000104
    Description: DFG http://dx.doi.org/10.13039/501100001659
    Description: Russian Science Foundation http://dx.doi.org/10.13039/501100006769
    Keywords: ddc:523 ; ddc:551.5
    Language: English
    Type: doc-type:article
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    CITATION GEO-LEO
  • 3
    Electronic Resource
    Electronic Resource
    Structure of a Myristoyl-ACP-Specific Thioesterase from Vibrio harveyi (1994)
    s.l. : American Chemical Society
    Biochemistry 33 (1994), S. 9382-9388 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00198a003
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  • 4
    Electronic Resource
    Electronic Resource
    Single-electron transistor as an electrometer measuring chemical potential variations (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2514-2516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic field dependence of the chemical potential of an electron system can be measured using a metallic single-electron transistor (SET). To demonstrate the method, a SET made of aluminum was fabricated on top of a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES). A change in the chemical potential of the 2DES causes a change in the contact voltage between the SET leads and the 2DES below the SET island which affects the current flow through the SET island. Tuning a voltage which is externally applied in series to the contact voltage, the change in the intrinsic contact voltage can be compensated to keep the SET current constant. With this tuning voltage, the change of the chemical potential by the magnetic field is directly measured. The method described here is applicable to other materials and other parameters affecting the intrinsic contact voltages. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120104
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  • 5
    Electronic Resource
    Electronic Resource
    Self-limiting behavior of scanning-electron-beam-induced local oxidation of hydrogen-passivated silicon surfaces (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism and the kinetics of electron-beam-induced local oxidation of an H-passivated Si surface in the electron energy range from 10 to 40 keV was investigated using scanning-electron-beam lithography. The volume expansion of Si upon oxidation produces a negative image surface pattern that can be imaged by atomic force microscopy. This latent pattern was used to study the dependence of the height and width of dot and line patterns as a function of the electron-beam exposure parameters. Patterns with minimum linewidth below 50 nm have been obtained. Similarly to atomic-force-microscope-induced local oxidation of Si, the height and linewidth saturate with electron dose for a given accelerating voltage. The saturation height roughly scales with the accelerating voltage, and depends more strongly on the accelerating voltage than the linewidth. The experimental results are interpreted by a mechanism that is based on charge generation and transport through the evolving insulating SiO2 layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125700
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  • 6
    Electronic Resource
    Electronic Resource
    Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3262-3264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010 cm Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476395
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1394-1396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between prepatterned catalyst film thickness and carbon nanotube (CNT) growth by selective area chemical vapor deposition (CVD) was studied using Fe and Ni as catalyst. To eliminate sample-to-sample variations and create a growth environment in which the film thickness is the sole variable, samples with continuously changing catalyst film thickness from 0 to 60 nm were fabricated by electron-gun evaporation. Using thermal CVD CNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature. There appears to be no strong correlation between the film thickness and the diameter of the tubes. In contrast, using plasma enhanced CVD with Ni as catalyst, vertically oriented CNTs grow in the entire range of catalyst film thickness. The diameter of these CNTs shows a strong correlation with the catalyst film thickness. The significance of these experimental trends is discussed within the framework of the diffusion model for CNT growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354658
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  • 8
    Electronic Resource
    Electronic Resource
    Directed assembly of carbon nanotube electronic circuits (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3759-3761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a method for directed assembly of integrated carbon nanotube circuits using selective area chemical vapor deposition on prepatterned catalyst electrodes. The circuits consist of a multiwall carbon nanotube bridging a pair of electrodes, forming a metal/carbon nanotube/metal structure. Electron-beam lithography was used to define electrode sets separated by a desired distance on a SiO2/Si substrate. Following metal evaporation and lift-off, molecular jet chemical vapor deposition was used for selective growth of carbon nanotubes on the catalyst electrodes. The carbon nanotubes eventually form a bridge between nearby electrodes consisting of one, or in some cases more than one multiwall nanotubes. The room temperature resistance of the carbon nanotube circuits measured at the electrode leads is typically less than 100 kΩ. The carbon nanotube circuits were characterized by electronic transport measurements in the temperature range from room temperature to 2 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126772
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  • 9
    Electronic Resource
    Electronic Resource
    Patterned growth of individual and multiple vertically aligned carbon nanofibers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3555-3557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of studies of patterned growth of vertically aligned carbon nanofibers (VACNFs) prepared by plasma-enhanced chemical vapor deposition are reported. Nickel (Ni) dots of various diameters and Ni lines with variable widths and shapes were fabricated using electron beam lithography and evaporation, and served for catalytic growth of VACNFs whose structure was determined by high resolution transmission electron microscopy. It is found that upon plasma pre-etching and heating up to 600–700 °C, thin films of Ni break into droplets which initiate the growth of VACNFs. Above a critical dot size multiple droplets are formed, and consequently multiple VACNFs grow from a single evaporated dot. For dot sizes smaller than the critical size only one droplet is formed, resulting in a single VACNF. In the case of a patterned line, the growth mechanism is similar to that from a dot. VACNFs grow along the line, and above a critical linewidth multiple VACNFs are produced across the line. The mechanism of the formation of single and multiple catalyst droplets and subsequently of VACNFs is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126705
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  • 10
    Electronic Resource
    Electronic Resource
    Microsatellite marker for yellow rust resistance gene Yr5 in wheat introgressed from spelt wheat (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 121 (2002), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Yellow rust of wheat caused by Puccinia striiformis f sp. tritici has been periodically epidemic and severely damaged wheat production in China and throughout the world. Breeding for resistant cultivars has been proved to be an effective way to resolve the problem. A yellow rust resistance gene, Yr5, derived from Triticum spelta shows immunity or high resistance to the most popular isolates Tiaozhong 30 and 31 in China. Establishment of DNA markers for the Yr5 gene will facilitate marker-assisted selection and gene pyramiding in the breeding programme. Since the Yr5 gene was cytologically located on the long arm of chromosome 2B, By33, the donor of Yr5, was crossed and backcrossed with the susceptible line 441, and BC3F2 and BC3F3 segregating populations were screened for polymorphism by using 11 microsatellite primers mapped on chromosome 2B. A marker, Xgwm501-195 bp/160 bp, was found to be linked to Yr5, with a genetic distance of 10.5-13.3 cM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2002.00754.x
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