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  • Articles  (211)
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  • 1
    Electronic Resource
    Electronic Resource
    Mechanisms of atomic layer epitaxy of GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 716-725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface chemistry of trimethylgallium and diethylgallium chloride on GaAs(100) surfaces as related to the atomic layer epitaxy (ALE) of GaAs. We have observed that during the Ga deposition, the reaction pathway of trimethylgallium changes such that there is significant CH3Ga emission at high Ga coverages. An examination of the Ga coverage dependence reveals that this stoichiometry dependent CH3Ga desorption can lead to self-limiting Ga deposition which is a prerequisite for ALE. Numerical simulation of the reaction shows reasonable agreement with low-pressure ALE growth data. Diethylgallium chloride was found to deposit GaCl on the GaAs surfaces, but with residence time decreasing rapidly with increasing Ga coverage. Again a numerical examination of this stoichiometry dependent phenomenon indicates that it can significantly contribute to the self-limiting Ga deposition. Both systems showed that stoichiometry dependent reactions can be important mechanisms for the atomic layer epitaxy process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353328
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of organic compounds on diesel engine soot (1981)
    s.l. : American Chemical Society
    Analytical chemistry 53 (1981), S. 951-954 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00230a050
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  • 3
    Electronic Resource
    Electronic Resource
    Pulsed anodic etching: An effective method of preparing light-emitting porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2323-2325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed anodic etching method is developed to prepare light-emitting porous silicon. Under the same equivalent etching condition, pulsed etching can yield a more uniform porous silicon film with stronger photoluminescence intensity than the film prepared by ordinary dc etching. The atomic force microscopic observation shows that the porous silicon surface prepared by pulsed etching contains more widely separated Si columns but with steeper sidewalls, which are believed to result in the improvement of quantum confinement. The thickness of pulse etched porous silicon film is found to be much larger than that of a dc etched sample. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115845
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  • 4
    Electronic Resource
    Electronic Resource
    Pyrolysis of trimethylgallium on GaAs(100) surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1883-1885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a combination of pulsed molecular beam and time-resolved mass spectrometry to study the kinetics of the pyrolysis of trimethylgallium on GaAs(100) surfaces. We found that CH3 is the major reaction product. Two CH3 desorption channels were observed, with activation energies 37.9±1.6 and 45.0±1.4 kcal/mole. An arsine ambient significantly accelerates the CH3 desorption, but no CH4 was observed. A model for the reaction of trimethylgallium on the GaAs(100) surface is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103224
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  • 5
    Electronic Resource
    Electronic Resource
    Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1011-1013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial reaction of the As-rich c(2×8) GaAs(100) surface with trimethylgallium (TMGa) has been studied by x-ray and ultraviolet photoemission. TMGa was found to chemisorb dissociatively at temperatures below 300 °C with many of the methyl radicals remaining on the surface. Bonding requirements and steric effects limit the saturation coverage to about 0.1 monolayer. At temperatures above 300 °C, TMGa was observed to dissociate on the surface, release all the methyl groups, and deposit Ga up to a self-limiting coverage. This process is most effective at high temperatures. We propose a model for the temperature dependence of the chemisorption which explains and unites many reported observations in the atomic layer epitaxy of GaAs using TMGa and arsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101719
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  • 6
    Electronic Resource
    Electronic Resource
    Doping reaction of PH3 and B2H6 with Si(100) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4032-4037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of phosphine PH3 and diborane B2H6 on Si(100) surfaces was studied by surface analytical techniques in relation to the in situ doping process in the chemical vapor deposition of silicon. Phosphine chemisorbs readily either nondissociatively at room temperature or dissociatively with the formation of silicon–hydrogen bonds at higher temperatures. Hydrogen can be desorbed at temperatures above 400 °C to generate a phosphorus layer. Phosphorus is not effective in shifting the Fermi level until the coverage reaches 2×1014/cm2. A maximum shift of 0.45 eV toward the conduction band was observed. In contrast, diborane has a very small sticking coefficient and the way to deposit boron is to decompose diborane directly on the silicon surface at temperatures above 600 °C. Boron at coverages less than 2×1014/cm2 is very effective in shifting the Fermi level toward the valence band and a maximum change of 0.4 eV was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336708
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  • 7
    Electronic Resource
    Electronic Resource
    Compact pulsed molecular beam system for real-time reactive scattering from solid surfaces (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1014-1026 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a compact system providing the capability of striking a sample surface with a short pulse of reactive gas in an UHV environment and monitoring the evolution of ensuing volatile reaction products. A 300-Hz rotating disk chopper synchronized with a pulsed valve produces molecular beam pulses of 12-μs FWHM at the chopper position. Only one stage of differential pumping separates the pulsed valve chamber from the target chamber with the latter under UHV conditions. The source of the molecular beam, comprised of the chambers containing the pulsed valve and the rotating disk chopper, occupies less than one square meter of floor space. Beam characterization is accomplished by the use of two UHV compatible fast ion gauges located in the target chamber. Reaction products are monitored with microsecond resolution via a differentially pumped quadrupole mass spectrometer located at right angles to the beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139602
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  • 8
    Electronic Resource
    Electronic Resource
    Differential SCR Conditioning With Two Control Baselines: Random Signal and Signal Absent (1973)
    Oxford, UK : Blackwell Publishing Ltd
    Psychophysiology 10 (1973), S. 0 
    Details
    ISSN: 1469-8986
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Thirty-six Ss, informed about the contingencies, were given differential SCR training with 3 different signals: CS+, CS−, and a signal which was random with respect to UCS occurrence. UCSs occurred randomly between trials and during random signal trials, were correlated with CS+ presence, and were absent during CS−. Employing nonspecific response frequency and amplitude, as well as responding during random signal trials, as baselines for comparison, evidence for both inhibitory and excitatory influences was obtained. The pattern of these influences was such as to question the proposition that a CS+ acquires general excitatory properties and a CS− acquires general inhibitory properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1469-8986.1973.tb01099.x
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  • 9
    Electronic Resource
    Electronic Resource
    Synthesis and Antimalarial Activities of 12.beta.-Allyldeoxoartemisinin and Its Derivatives (1995)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 38 (1995), S. 613-616 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00004a007
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis and Antimalarial Activities of Several Fluorinated Artemisinin Derivatives (1995)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 38 (1995), S. 4120-4124 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00020a028
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