Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 1588-1594
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoluminescence of Ga0.54In0.46As0.12P0.88 layers grown by metalorganic vapor phase epitaxy on differently oriented GaAs substrates has been investigated. Valence-band splitting due to symmetry breaking in ordered quaternary alloys was demonstrated by room temperature photoluminescence polarization spectroscopy. Single- and two-variant ordering was identified by high resolution x-ray diffraction on samples grown on (001) GaAs substrates misoriented 2° off to {11¯1} B and on just oriented ones, respectively. The low temperature photoluminescence spectra consist of moving and nonmoving components, typical for ordered material. The blueshift of the moving component versus the pump level for the 0° samples is stronger than that for the 2°B samples. The full width at half maximum of the moving component increases with increasing injection level for the 0° samples, whereas it decreases for 2°B samples. We suppose that this different behavior of the low temperature photoluminescence observed on single- and two-variant samples is related to different domain structures. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368228
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