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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1518-1521 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen has been introduced in the preparation of hydrogenated amorphous silicon carbon alloy films by magnetron sputtering of silicon in a methane-argon gas mixture. The partial pressure of nitrogen was changed, and its effects on the structural, optical, electrical, and optoelectronic properties of the deposited films were investigated. The SiN bond becomes predominant with increasing partial pressure of nitrogen pN above 10%, at which the optical band gap is rapidly increased. The concentration of silicon and carbon in the films remained almost unchanged by changing pN up to 20%. It was found that the photoconductivity is also almost unchanged up to 20%, while the optical band gap is increased. This indicates that the photoconductivity is improved over a wider optical band gap, as compared with previous studies when the optical band gap was changed by changing deposition conditions but without introducing nitrogen.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 938-947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quasi-epitaxial growth of vacuum-deposited films of diacetylenes on various substrates, including uniaxially aligned polymer surfaces formed with rubbing treatment or Langmuir–Blodgett technique, is reported. The oriented polydiacetylene (PDA) films are readily obtained from these monomer films using photopolymerization. Highly oriented PDA films with excellent optical qualities have been obtained on rubbed polyethylene terephthalate surfaces. The typical dichroic ratio of these oriented PDA films is more than 100:1. This ratio is high enough to permit the application of these films to optical waveguide devices. The method for obtaining these highly oriented PDA films is described in detail. In addition, the structure, the morphology, and the optical anisotropy of these PDA films is examined by x-ray and electron diffraction, electron microscopy, and other optical means.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phenomena of colossal magnetoresistance (MR) or magnetic field induced insulator–metal (I–M) transitions have been investigated for single crystals of perovskite-type manganese oxides with controlled carrier density and one-electron bandwidth. In addition to the canonical MR behavior near the Curie temperature, the first-order phase transition accompanying several orders of magnitude change in resistivity has been observed under an external magnetic field for many of the composition-controlled crystals as an intrinsic bulk phenomenon. It was proved by the systematic experimental investigations that the field-induced destruction of the charge-ordered state accompanying the lattice structural as well as metamagnetic transition is a major origin of such a colossal MR. Versatile MR phenomena and I–M phase diagrams in the T–H plane are presented with their interpretation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4954-4956 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magnetoresistance (MR) phenomena relevant to the charge ordering (CO), namely, the real space ordering of both Mn3+ and Mn4+, in single crystals of (Nd1−ySmy)1/2Sr1/2MnO3, in which the one-electron bandwidth (W) is systematically controlled by varying the average ionic radius of the A site. The low-field colossal MR is observed for the small-W region of y≥0.5; e.g., ρ(0)/ρ(H)〉103 in a field of 0.4 T at 115 K for the y=0.94 crystal. This is viewed as a first-order insulator-to-metal phase transition induced by a magnetic field, which accompanies a lattice-structural change. In the small-W region, the CO instability accompanying the antiferromagnetic spin correlations subsists even above the ferromagnetic transition temperature Tc. The competition between the ferromagnetic double-exchange and antiferromagnetic CO interactions gives rise to such a lattice-coupled first-order phase transition induced by a relatively low magnetic field. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 164-166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A specific angular distribution of x rays from 111In embedded in a thin-film waveguide (Au film/Langmuir–Blodgett film/Au substrate) is observed by a non-energy-dispersive two-dimensional detector (imaging plate). The angular distribution for the thickness of the upper Au layer of 90 A(ring) can be explained by normal calculation of the optical electromagnetic wave solution of Maxwell's equations for each interface and reciprocity. However, the angular pattern in the upper 400 A(ring) Au thickness layer cannot be accounted for by the normal approach without considering the intensity of the x-ray sheet beam emerging from the end of the multilayer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3609-3611 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To explore the optimized colossal magnetoresistance (MR), i.e., higher MR with lower field, magnetotransport properties of single-crystalline perovskite manganites have systematically been investigated. Near x=1/2 with intrinsic instability of charge ordering (a 1/1 ordering of Mn3+/Mn4+), the one-electron bandwidth (W) is varied by reducing the radius of R-site cation in R1−xSrxMnO3. For R=Nd, the MR behavior is rather canonical, while for R=Sm, the field-induced nonmetal-to-metal transition of the first order shows up accompanying a change in resistivity by several orders of magnitude as a result of an enhanced antiferromagnetic interaction. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 328-330 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric, thermal, optical, and magnetic properties have been investigated for ferromagnetic (ferrimagnetic) ordered double perovskites, A2CrReO6 (A=Sr and Ca). Sr2CrReO6 is found to be a metallic ferromagnet with a high Curie temperature (TC=635 K), possibly the highest-TC half metal among the perovskite family. By contrast, Ca2CrReO6 is a ferromagnetic Mott insulator with TC of 360 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3505-3507 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of a magnetorelaxor compound, Pr0.5Ca0.5Mn1−yCryO3 were grown on various substrates. Strain-free and polycrystalline thin films on MgO substrates well reproduce the properties reported for the bulk samples. Pseudomorphically strained and atomically smooth epitaxial thin films grown on perovskite substrates show strain-driven modification of the properties. Being consistent with the orbital ordering accompanied with charge ordering, tensile strain anomalously stabilizes the charge-ordered (CO) state. Compressive strain also suppresses ferromagnetism but high-Cr doping (y=0.10) induces magnetorelaxor behaviors, where the volume ratio of coexisting CO and ferromagnetic phases can be tuned and memorized by the history of the magnetic-field application. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillan Magazines Ltd.
    Nature 388 (1997), S. 50-52 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Magnetoresistive devices (based on, for example, magnetic multilayers) exhibit large changes in electrical resistance in response to a magnetic field, which has led to dramatic improvements in the data density and reading speed of magnetic recording systems. Manganese oxides having a perovskite ...
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  • 10
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 386 (1997), S. 813-815 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The x = 0 and x = 1 end-members of the Pr!_xCaxMnO3 family are insulating antiferromagnets with the manganese ion in the Mn3+ and Mn4+ valence states, respectively10. For intermediate x, the average Mn valence is non-integer and the material is generally semiconducting or metallic at high ...
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