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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1406-1409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe first results for deuterium effusion from undoped and doped crystalline silicon (n- and p-type) treated in a D2 plasma under different conditions. The dependence of the effusion spectra on doping level, passivation temperature, sample bias, and preannealing are presented and the results are discussed on the basis of different D-bonding configurations in the passivated silicon samples.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2507-2515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the kinetics of metastable defect creation in amorphous hydrogenated silicon we introduce the Constant Degradation Method as a new experimental scheme. In contrast to conventional degradation experiments in which the incident light intensity is constant during light soaking, in this method the photoconductivity of the sample is kept constant by continuously increasing the light intensity. In this case a linear time dependence of the required light intensity and of the resulting defect density is observed experimentally. A detailed analysis of the method shows that the data obtained are in accordance with the assumption of the "bond-breaking'' model, i.e., the metastable defects are created by bimolecular recombination of localized electron-hole pairs. The observed time dependence is at variance with the stretched exponential time dependence predicted for dispersive transport models. Effects of sample heating due to high light intensities and of Fermi level shifts on the observed time dependence are also discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1620-1622 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has been suggested that excitonic tail-to-tail recombination leads to metastable defect creation in a-Si:H. Our experimental results are shown to be consistent with this model.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2313-2315 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative explanation is derived for the light-induced degradation of compensated amorphous silicon. The analysis suggests that donor levels in compensated hydrogenated amorphous silicon (a-Si:H) lead to an efficient spatial separation of trapped electrons and holes, thereby preventing excitonic tail-to-tail recombination thought to be responsible for metastable defect creation during illumination. This confirms the original defect creation model which has recently been challenged by single carrier mechanisms invoking dispersive hydrogen motion as the rate-limiting step.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 565-566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2012-2014 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-doped epitaxial GaN layers with Ga- and N-face polarity were grown by plasma-induced molecular-beam epitaxy (PIMBE) in order to characterize the influence of polarity on the electrical properties of Pt Schottky diodes. Different barrier heights for Pt onto these two materials are obtained from the dependence of the effective barrier height versus ideality factor, determined by I–V measurements to be 1.1 and 0.9 eV for Ga- and N-face GaN, respectively. C–V measurements confirm the greater barrier heights for Ga-face material. A possible explanation for this behavior can be a different band bending of the conduction and valence band, inferred from the self-consistent solution of the Schrödinger–Poisson equation, including polarization-induced surface and interface charges, which result from the different spontaneous polarization in epitaxial layers with different polarity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1434-4475
    Keywords: Keywords. Anisotropy of IR absorption; CaSi2 epitaxy; Diode structure; Structural analysis.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung.  Das epitaktische Wachstum dünner CaSi2-Filme auf verschiedenen Siliziumoberflächen wird beschrieben. Die Umwandlung des Silizids in Siloxen ergibt unterschiedlich orientierte epitaktische Siloxenfilme von hoher Schichtqualität. Die strukturelle Qualität von CaSi2 und Siloxen wurde mit Hilfe von Transmissionselektronen- und Rastertunnelmikroskopie sowie Röntgendiffraktion untersucht. Siloxen auf (110)-Si ermöglicht einen direkten Nachweis der anisotropen Schwingungseigenschaften mittels IR-Transmissionsmessungen. Mit Siloxen und Kontakten mit unterschiedlicher Austrittsarbeit zur Ladungsträgerinjektion wurde eine Diodenstruktur hergestellt.
    Notes: Summary.  Epitaxial growth of thin CaSi2 films on various silicon surfaces is described. Transforming the silicide into siloxene leads to high quality epitaxial siloxene films with different orientations. The structural quality of CaSi2 and siloxene is investigated by transmission and scanning electron microscopy as well as X-ray diffraction analysis. Siloxene on (110)-Si enables direct observation of the anisotropic vibrational properties by IR transmission measurements. A diode structure was realized with siloxene by using contacts with different work functions as charge carrier injectors.
    Type of Medium: Electronic Resource
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  • 8
    Publication Date: 2011-06-02
    Description: Author(s): Jinming Lu, Felix Hoehne, Andre R. Stegner, Lukas Dreher, Martin Stutzmann, Martin S. Brandt, and Hans Huebl Paramagnetic centers in a solid-state environment usually give rise to inhomogeneously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, high-resolution experimental results of a... [Phys. Rev. B 83, 235201] Published Wed Jun 01, 2011
    Keywords: Semiconductors I: bulk
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 9
    Publication Date: 2011-09-08
    Description: Noise with periods 3 to 10 s, ubiquitous in seismic records, is expected to be mostly generated by pairs of ocean wave trains of opposing propagation directions with half the seismic frequency. Here we present the first comprehensive numerical model of microseismic generation by random ocean waves, including ocean wave reflections. Synthetic and observed seismic spectra are well correlated (r 〉 0.85). On the basis of the model results, noise generation events can be clustered in three broad classes: wind waves with a broad directional spectrum (class I), sea states with a significant contribution of coastal reflections (class II), and the interaction of two independent wave systems (class III). At seismic stations close to western coasts, noise generated by class II sources generally dominates, but it is intermittently outshined by the intense class III sources, limiting the reliability of seismic data as a proxy for storm climates. The modeled seismic noise critically depends on the damping of seismic waves. At some mid-ocean island stations, low seismic damping is necessary to reproduce the observed high level and smoothness of noise time series that result from a spatial integration of sources over thousands of kilometers. In contrast, some coastal stations are only sensitive to noise within a few hundreds of kilometers. This revelation of noise source patterns worldwide provides a wealth of information for seismic studies, wave climate applications, and new constraints on the possible directional distribution of wave energy.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
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  • 10
    Publication Date: 2013-06-11
    Description: [1]  Among the different types of waves embedded in seismic noise, body waves present appealing properties but are still challenging to extract. Here we first validate recent improvements in numerical modeling of microseismic compressional ( P ) body waves and then show how this tool allows fast detection and location of their sources. We compute sources at ~ 0.2 Hz within typical P teleseismic distances (30-90 degrees) from the South California Seismic Network (SCSN) and analyze the most significant discrete sources. The locations and relative strengths of the computed sources are validated by the good agreement with beam-forming analysis. These ~75 noise sources exhibit a highly heterogeneous distribution, and cluster along the usual storm tracks in the Pacific and Atlantic oceans. They are mostly induced in the open ocean, at or near water depths of 2800 and 5600 km, most likely within storms or where ocean waves propagating as swell meet another swell or wind sea. We then emphasize two particularly strong storms to describe how they generate noise sources in their wake. We also use these two specific noise bursts to illustrate the differences between microseismic body- and surface-waves in terms of source distribution and resulting recordable ground motion. The different patterns between body- and surface-waves result from distinctive amplification of ocean wave-induced pressure perturbation and different seismic attenuation. Our study demonstrates the potential of numerical modeling to provide fast and accurate constraints on where and when to expect microseismic body waves, with implications for seismic imaging and climate studies.
    Print ISSN: 0148-0227
    Topics: Geosciences , Physics
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