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  • 1
    Electronic Resource
    Electronic Resource
    Folded acoustic phonons in InAs-AlAs strained-layer superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 804-806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to characterize highly mismatched (7%) InAs-AlAs superlattices grown by atomic layer molecular beam epitaxy. In particular, folded acoustic modes are presented and compared with two different theoretical models (Rytov and linear chain). We find good agreement between theory and experiments. We estimate, with a simple model, the magnitude of the effect of the strain on the phonon frequency shifts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100852
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering study of InSb etched by reactive ion beam etching (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8853-8855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman study of InSb etched by reactive ion beam etching using a CH4/H2/N2 plasma generated by electron cyclotron resonance is presented. The evolution of the LO, 2LO phonon and phonon–plasmon coupled modes has been studied using resonant Raman spectra in different configurations. Results indicate an increase of the carrier density by a factor of about 60 and a decrease of the built-in potential due to the plasma process. The combination of both evolutions results in a prevalence of the electric field induced scattering upon the defect induced scattering mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362472
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced magneto-optical Kerr effect in oxidized Co thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5621-5625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structural and magneto-optical properties of postdeposition oxidized Co thin films. The oxidization process leads to the formation of a double-layered structure of fcc Co3O4 on top of metallic Co. The magneto-optical Kerr effect (MOKE), measured in the range 0.8 eV≤EPh≤5.5 eV reveals characteristic dependencies of the MOKE spectra on annealing temperature and time. In particular, we observe resonance-type enhancements of the Kerr effects by up to a factor of 10 compared with unannealed metallic Co. The experimental data are quantitatively reproduced by bilayer optical stack calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367413
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  • 4
    Electronic Resource
    Electronic Resource
    Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 339-342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the optical properties of GaAs/AlAs superlattices grown by molecular beam epitaxy (MBE) and atomic layer MBE (ALMBE) on {113}A-oriented GaAs substrates. The corrugation which appears in the samples obtained by MBE does not exhibit any periodicity. Phonon-associated replicas are only observed on the photoluminescence excitation spectra of ALMBE superlattices. It was found that the observed differences can be attributed to the growth techniques employed in the synthesis of the samples: MBE superlattices have rougher interfaces than the ALMBE ones, but a lower number of nonradiative recombination centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359523
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the deformation potentials of GaAs0.80P0.20 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1951-1953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357653
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of E0 and E1 transitions in AlGaP alloys by electrolyte electroreflectance (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3929-3931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of AlxGa1−xP alloys of various compositions have been investigated by electrolyte electroreflectance. E0 and E1 optical transitions have been observed for the first time in the spectral region between 3000 and 4500 A(ring). Both empirical relationships, E0=2.78+1.05x and E1=3.77+0.26x, between the transition energies and the alloy composition were found. The extrapolated values for x=1 were the first semiempirical values for the E0 and E1 transition of AlP at room temperature. The indirect energy gap of the sample with x=0.30 was obtained from photoelectrochemical measurements to be 2.43 eV, a value slightly higher than that reported in the literature for the same composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344019
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of GaAs/GaP strained-layer superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2044-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a novel system, the GaAs/GaP strained-layer superlattice, are studied and compared with a theoretical model. Photoluminescence and photoreflectance measurements revealed that among the set of superlattices under study type-I and type-II behaviors (similar to those found in the lattice-matched GaAs/AlAs system) are present. The evolution of the photoluminescence peaks as a function of temperature and excitation density supported the assignment of the transitions involved. This is to our knowledge the first observation of direct (type-I) and indirect (type-II) transitions in strained-layer superlattices. A comparison with a theoretical model has led to an estimation of the conduction-band offset as 0.4 eV, which is the first value obtained from experiment in a GaAs/GaP heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345588
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  • 8
    Electronic Resource
    Electronic Resource
    Nitrogen incorporation effects in Fe(001) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6314-6319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen incorporates into Fe thin films during reactively sputtered TiN capping layer deposition. The influence that this nitrogen incorporation has both on the structure and magnetic properties is discussed for a series of Fe(001) thin films grown at different temperatures. A higher nitrogen content is accompanied by distortion in the Fe lattice and by reduction in the Fe magnetization saturation as well as in the effective anisotropy constant, K. The reduction of K brings as a consequence lowering in the coercive field with respect to equivalent Fe films with no nitrogen present. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368398
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  • 9
    Electronic Resource
    Electronic Resource
    Ellipsometric study of AlInAs and AlGaP alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 965-970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry has been used for determining optical direct interband transitions in a set of AlxIn1−xAs and AlxGa1−xP alloys. From these experimental results, the dependence of the E0 and E1 transitions is established as a function of the Al composition and the bowing parameters are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347341
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  • 10
    Electronic Resource
    Electronic Resource
    Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2197-2199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane optical anisotropies of (001)-oriented InAs/InP self-assembled quantum wires and dots structures are studied by means of photoreflectance in the spectral region of the E1 transition of bulk InAs. The energy position of the transition observed in the quantum wires depends on the light polarization; quantum dots do not exhibit, in contrast, such an optical anisotropy. This anisotropy is attributed to the splitting of the four-fold degenerate E1 transition produced by the strong triaxial behavior of the strain that appears in wires and not in dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126854
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