ISSN:
1057-9257
Keywords:
fluorinated silicon dioxide
;
silicon dioxide
;
dielectric constant
;
plasma-enhanced chemical vapour deposition
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Deposition processes and film properties of plasma-enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3-3.7) than non-fluorinated silicon dioxide films (〉4). With similar dielectric strengths, the reduced capacitance obtained with FSG films makes them useful as intermetal dielectrics (IMDs). The films are characterised using Fourier transform infrared spectroscopy, Auger electron spectroscopy, ellipsometry and capacitance-voltage measurements. Characterisation of the changes in FSG upon exposure to ambient conditions and a method for stabilising the films are presented
Additional Material:
6 Ill.
Type of Medium:
Electronic Resource
Permalink
