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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4292-4296 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2766-2768 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) in PbWO4 single crystals doped with Pr3+, Sm3+, and Er3+ ion, which were grown by the Czochralski method, was studied. By investigating the PL for incident radiation with wavelength of 325 nm (He–Cd Laser), the energy levels of the PL centers were found: The PL levels in the Pr doped single crystal are 3Po and 1D2, that in the Sm-doped one is 4G5/2, and those in the Er doped one are 2H11/2, 4S3/2, and 4F9/2. In conclusion, the characteristics of these single crystals are governed solely by those of the rare-earth dopants, not by the lead tungstate. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4114-4116 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We developed and evaluated a new partially ionized beam (PIB) source to deposit high quality Cu films. The novelty of the PIB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell to make its structure compact and to get a uniform beam profile, but their electric circuits are not separated. In this article, we report the characteristics of the PIB source, such as voltage-ampere characteristics of the crucible and ionization parts, Cu+ ion beam uniformity with a change of the ionization currents, and deposition rate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2022-2024 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Zn1−xMgxO(0.00≤x≤0.49) thin films were epitaxially grown at 500–650 °C on Al2O3(00⋅1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Å and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 882-884 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied effects of oxygen plasma treatment on the ferroelectric Pb(Zrx,Ti1−x)O3 (PZT) films prepared by a sol-gel method. Electrical characteristics of the films were found to be improved considerably by exposure to the O2 plasma, with enhanced remanent polarization and decreased leakage current densities. Chemical bonding analysis by means of x-ray photoelectron spectroscopy in the Pb 4f region indicated that the intensity from the perovskite PZT phase increased considerably after the O2 plasma treatment, giving rise to the improved performances of the PZT films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 1 (1993), S. 61-75 
    ISSN: 1573-2746
    Keywords: Metal/ceramic interface ; internal oxidation ; Cu/MgO heterophase interface ; high resolution electron microscopy ; atom-probe field-ion microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The chemical composition profile across a Cu/MgO {111}-type heterophase interface, produced by the internal oxidation of a Cu(Mg) single-phase alloy at 1173 K, is measured via atom-probe field-ion microscopy with a spatial resolution of 0.121 nm; this resolution is equal to the interplanar spacing of the {222} MgO planes. In particular, we demonstrate directly that the bonding across a Cu/MgO {111}-type heterophase interface, along a 〈111〉 direction common to both the Cu matrix and an MgO precipitate, has the sequence Cu|O|Mg... and not Cu|Mg|O...; this result is achieved without any deconvolution of the experimental data. Before determining this chemical sequence, it was established, via high-resolution electron microscopy, that the morphology of an MgO precipitate in a Cu matrix is an octahedron faceted on {111} planes with a cube-on-cube relationship between a precipitate and the matrix; that is, {111}Cu//{222}MgO and 〈110〉Cu // 〈110〉MgO.
    Type of Medium: Electronic Resource
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  • 8
    Publication Date: 2012-01-18
    Description: Author(s): S. W. Han, D. C. Ling, H. M. Tsai, C. H. Chuang, S. L. Wu, W. F. Pong, J. W. Chiou, M.-H. Tsai, L. Y. Jang, H. J. Lin, T. W. Pi, and J. F. Lee Local electronic structures of ruthenocuprate RuSr 2 EuCu 2 O 8 (RuEu-1212) were investigated by using x-ray absorption near-edge structure (XANES) and valence-band photoemission (VB-PES) measurements at room temperature, 80 K, and 25 K. The XANES results indicate that when RuEu-1212 is below Curie tempe... [Phys. Rev. B 85, 014506] Published Tue Jan 17, 2012
    Keywords: Superfluidity and superconductivity
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 9
    Publication Date: 2011-03-19
    Description: Author(s): Z. Pribulová, J. Kačmarčík, C. Marcenat, P. Szabó, T. Klein, A. Demuer, P. Rodiere, D. J. Jang, H. S. Lee, H. G. Lee, S.-I. Lee, and P. Samuely Specific heat has been measured down to 600 mK and up to 8 T by highly sensitive ac microcalorimetry on MgCNi_{3} single crystals with T_{c} ≈ 7 K. Exponential decay of the electronic specific heat at low temperatures proved that a superconducting energy gap is fully open on the whole Fermi surfac... [Phys. Rev. B 83, 104511] Published Fri Mar 18, 2011
    Keywords: Superfluidity and superconductivity
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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  • 10
    Publication Date: 2011-05-10
    Description: Author(s): Woo Seok Choi, D. W. Jeong, S. S. A. Seo, Y. S. Lee, T. H. Kim, S. Y. Jang, H. N. Lee, and K. Myung-Whun We investigated the magnetic and optical properties of [(LaMnO_{3} )_{n} /(SrTiO_{3} )_{8} ]_{20} (n = 1, 2, and 8) superlattices grown by pulsed-laser deposition. We found that a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity show... [Phys. Rev. B 83, 195113] Published Mon May 09, 2011
    Keywords: Electronic structure and strongly correlated systems
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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