Note: Front Cover -- Gallium Nitride (GaN) II -- Copyright Page -- Contents -- Preface -- List of Contributors -- CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides -- List of Acronyms and Abbreviations -- I. Introduction -- II. Nitride HVPE Growth -- III. GaN Film Characterization -- IV. Light-Emitting Diodes -- V. HVPE for Nitride Substrates -- VI. Conclusions -- References -- CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy -- I . Introduction -- II. Background of Molecular Beam Epitaxy Techniques -- III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy -- IV. GaN Films -- V. InGaAlN Alloys -- VI. Multiquantum Wells -- VII. Device Applications -- VIII. Conclusions -- References -- CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers -- I. Introduction -- II. Polarity of the Crystals -- III. Defect Distribution -- IV. Nanotubes -- V. PL and Point Defects -- VI. Influence of Annealing -- VII. Larger-Dimension Bulk GaN Crystals -- VIII. Homoepitaxial Layers -- IX. Summary -- References -- CHAPTER 4. Hydrogen in III-V Nitrides -- I. Introduction -- II. Theoretical Framework -- III. Experimental Observations -- IV. Conclusions and Outlook -- References -- CHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium Nitride -- I. Introduction -- II. Materials Preparation -- III. Shallow Dopants -- IV. Deep Level Defects -- V. Conclusions -- References -- CHAPTER 6. Stress Effects on Optical Properties -- I. Introduction -- II. The Crystalline Structures of III-Nitrides -- III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides -- IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings -- V. Origin of the Strain -- VI. Phonons Under Strain Fields -- VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure. , VIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum Wells -- IX. Self-Organized Quantum Boxes -- X. Conclusion -- References -- CHAPTER 7. Strain in GaN Thin Films and Heterostructures -- I. Thin-Film Growth at Low Temperatures -- II. Stress/Strain Relations -- III. Control of Hydrostatic and Biaxial Stress and Strain Components -- IV. Strained AlN/InN/GaN Heterostructures -- V. Perspectives -- References -- CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride -- I. Introduction -- II. Background -- III. Second-Order Nonlinear Optical Phenomena -- IV. Third-Order Nonlinear Optical Phenomena -- V. Potential Devices -- VI. Conclusions -- References -- CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides -- I. Introduction -- II. Magnetic Resonance-The Basis of Identification -- III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results) -- IV. Shallow and Deep Donors in GaN (ODMR Results) -- V. Shallow and Deep Acceptors in GaN -- VI. Defects Induced by Particle Irradiation in GaN and AIN -- VII. Device-Related Magnetic Resonance Studies -- VIII. Transition Metal Impurities -- IX. Outlook -- References -- Chapter 10. GaN and AIGaN Utraviolet Detectors -- I. Introduction -- II. Principle of Operation -- III. Detectiviy and Noise Equivalent Power (NEP) -- IV. GaN Photodetector Fabrication -- V. GaN-Based Photoconductive Detectors -- VI. GaN-Based Photovoltaic Detectors -- VII. Optoelectronic A1GaN/GaN Field Effect Transistors -- VIII. Conclusions and Future Challenges -- References -- CHAPTER 11. III-V Nitride-Based X-ray Detectors -- I. Introduction -- II. Materials Requirements and Current Status -- III. The Photoconductivity Response of Nitrides -- IV. Effects of Irradiation on GaN -- V. X-ray Response of Prototype Diodes -- VI. Summary and Future Work -- References -- Index. , Contents of Volumes in This Series.

Note: Front Cover -- Semiconductors and Semimetals, Volume 35 -- Copyright Page -- Contents -- Contributors -- Preface -- Chapter 1. Introduction -- References -- Chapter 2. Quantum Point Contacts -- I. Introduction -- II. Split-Gate Quantum Point Contacts -- III. Ballistic Quantum Transport -- IV. AdiabaticTransport in theQuantum Hall Effect Regime -- V. Acknowledgments -- References -- Chapter 3. When Does a Wire Become an Electron Waveguide? -- I. Introduction -- II. Two-Terminal Resistance of an Electron Waveguide -- III. Three-Terminal Resistance -- IV. Four-Terminal Resistance -- V. Summary and Outlook -- Acknowledgments -- References -- Chapter 4. The Quantum Hall Effect in Open Conductors -- I. Introduction -- II. Basic Elements of Electrical Conduction -- III. Quantization and Interference in the Absence of a Field . -- IV. Motion in High Magnetic Fields: The Two-Terminal Resistance -- V. The Quantum Hall Effect in Open Conductors -- VI. Resonant Departures from the Hall Resistance -- VII. Discussion -- Acknowledgment -- References -- Chapter 5. Electrons in Laterally Periodic Nanostructures -- I. Introduction -- II. Realization of Laterally Periodic Nanostructures -- III. Transport in Periodic Nanostructures -- IV. Far-Infrared Spectroscopy of Electronic Excitations -- V. Conclusions and Perspectives -- Acknowledgments -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Semiconductors and Semimetals, Volume 65 -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Polymeric and Molecular Organic Light Emitting -- I. Introduction -- II. Polymers Vs Molecular Organic Materials -- III. Polymer Led Structures -- IV. Current-Voltage-Luminance Characteristics -- V. The Good and the Bad of Organic Materials -- VI. A Light at the End of the Tunnel? -- References -- Chapter 2. Thin Film Electroluminescence -- I. Introduction -- II. Phenomenology -- III. Basic Mechanisms in Thin Film Electroluminescence -- IV. Thin Film El Devices -- Measuring TFEL -- References -- Chapter 3. Materials in Thin Film Electroluminescent Devices -- I. Introduction -- II. Device Structures and Characteristics -- III. Film Deposition Techniques -- IV. Tfel Phosphors -- V. Other Materials -- VI. Conclusions -- References -- Chapter 4. Microcavities for Electroluminescent Devices -- I. Introduction -- II. Theoretical Description -- III. Basic Examples -- IV. Applications -- V. Conclusion -- References -- Index -- Contents of Volumes in this Series.

Note: Front Cover -- Electroluminescence I -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Visible Light-Emitting Diodes -- I. Historical Overview -- II. LED Basics -- III. LED Technology -- IV. LED Performance and Related Technologies -- V. Applications of Visible LEDs -- VI. Future Trends -- References -- Chapter 2. High-Efficiency AlGaInP Light-Emitting Diodes -- I. Introduction -- II. AlGaInP Material Properties -- III. AlGaInP LED Device Design -- IV. Epitaxial Growth -- V. Device Fabrication and Packaging -- VI. AlGaInP Device Performance -- VII. Conclusions -- References -- Chapter 3. High-Brightness Nitride-Based Visible-Light-Emitting Diodes -- I. Introduction -- II. III-V Nitride Crystal Growth -- III. Electronic Properties and Characterization of III-V Nitride Films -- IV. Nitride LED Device Structures and Performance -- V. Summary and Conclusions -- References -- Chapter 4. Organic LED System Considerations -- I. Introduction -- II. Reliability Issues for Practical Application -- III. Driving Scheme -- IV. OLED Panels -- V. Summary -- References -- Chapter 5. Molecular Organic Light-Emitting Devices -- I. Overview -- II. Theory of Operation of Organic Light-Emitting Devices -- III. Improved Operation of Organic Light-Emitting Devices -- IV. Color-Tunable OLEDs in Full-Color Displays -- V. SUMMARY -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Nonlinear Optics in Semiconductors II -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Second Order Nonlinearities and Optical Rectification -- I. Introduction -- II. Second-Order Nonlinear Effects in Bulk Semiconductors -- III. x(2) Experiments in Bulk Semiconductors -- IV. Second-Order Susceptibility in Semiconductor Quantum Wells and Superlattices -- V. Optical Rectification and Terahertz Emission in Semiconductors -- VI. Conclusions -- List of Abbreviations and Acronyms -- Refrences -- Chapter 2. Nonlinearities in Active Media -- I. Introduction -- II. Active Semiconductor Media -- III. Measurement Techniques -- IV. Nonlinear Index of Refraction in Active Media -- V. Data Analysis and Interpretation -- VI. Shaping and Saturation of Short Pulses in Active Waveguides -- VII. Four-Wave Mixing -- VIII. Applications -- IX. Summary -- References -- Chapter 3. Optical Responses of Quantum Wires/Dots and Microcavities -- I. Theoretical Aspects -- II. Experimental Results -- Refrences -- Chapter 4. Semiconductor Nonlinearities for Solid-state Laser Modelocking and Q-Switching -- I. Introduction -- II. Semiconductor Saturable Absorber Mirrors (SESAMs) -- III. SESAM Designs -- IV. Passively Modelocked Solid State Lasers Using SESAMs -- V. Passively Q-Switched Solid State Lasers Using SESAMs -- VI. Conclusions and Outlook -- List of Abbrevations and Acronyms -- References -- Chapter 5. Transient Grating Studies of Carrier Diffusion and Mobility in Semiconductors -- I. Optical Nonlinearities and Carrier Transport -- II. Transient Gratings -- III. Bulk Semiconductors -- IV. Exciton Saturation in MQWs -- V. In-Well Transport in MQWs -- VI. Cross-Well Transport in QWs -- VII. Hetero-n-i-pi Structures -- VIII. Conclusions -- References -- Index -- Contents of Volumes in This Series.

Note: Front Cover -- Oxygen in Silicon: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Introduction to Oxygen in Silicon -- Chapter 2. The Incorporation of Oxygen into Silicon Crystals -- I . Introduction -- II. Silicon Crystal Growth -- III. Characteristics of Czochralski Silicon Growth -- IV. Oxygen Incorporation and Segregation in Czochralski Silicon Growth -- V. Controlled Oxygen Silicon Growth -- VI. Summary -- References -- Chapter 3. Characterization Techniques for Oxygen in Silicon -- I. Introduction -- II. Physical Techniques -- Ill. Chemical Techniques -- IV. Electrical Techniques -- V. Summary -- References -- Chapter 4. Oxygen Concentration Measurement -- I. Introduction -- II. Infrared Absorption Measurements Under Ideal Conditions -- III. Infrared Spectrometers -- IV. Analysis of Oxygen Spectra -- V. Absolute Determinations and Calibration Factors -- VI. Standards and Reference Materials -- VII. Summary -- Acknowledgments -- References -- Chapter 5. Intrinsic Point Defects in Silicon -- I. Introduction -- II. Swirl Defect Manifestation of Intrinsic Point Defects -- III. Thermal Defects in Silicon -- IV. Self-Diffusion -- V. Coexistence of Vacancies and Self-Interstitials in Silicon -- VI. Interstitial Configuration and Charge-Enhanced Migration -- VII. Formation and Migration Parameters of Point Defects -- VIII. Defect Energetics and Pathways from Theoretical Calculations -- IX. Summary -- References -- Chapter 6. Some Atomic Configurations of Oxygen -- I. Introduction -- II. Spectroscopy of Localized Modes in Semiconductors -- III. Interstitial Oxygen -- IV. Quasi-Substitutional Oxygen -- V. Comparison with Other Light Element Impurities -- VI. Oxygen in Other Semiconductors -- VII. Summary -- Acknowledgments -- References. , Chapter 7. Electrical Properties of Oxygen in Silicon -- I. Introduction -- II. Thermal Donors -- III. New Donors -- References -- Chapter 8. Diffusion of Oxygen in Silicon -- I. Introduction -- II. Direct Measurements of Normal Oxygen Diffusion -- III. Indirect Measurements of Normal Oxygen Diffusion -- IV. Enhanced Oxygen Diffusion Not Involving Hydrogen -- V. Silicon Containing Hydrogen Impurities -- VI. Theoretical Modeling of Oxygen Diffusion -- VII. Constraints on Models of Thermal Donor Centers -- VIII. Summary -- Acknowledgments -- References -- Chapter 9. Mechanisms of Oxygen Precipitation: Some Quantitative Aspects -- I. Introduction -- II. Volume Shortage Associated with Oxygen Precipitation -- III. Precipitate Nucleation -- IV. Precipitate Growth -- V. The Effect of Carbon -- VI. Defect Generation -- VII. Summary: The Free Energy and Flux Balance Treatment of the Oxygen Precipitation Problem -- References -- Chapter 10. Simulation of Oxygen Precipitation -- I. Introduction -- II. Model Types -- III. Models and Experimental Results -- V. On the Interactions of Oxygen with Other Defects -- VI. Summary -- References -- Chapter 11. Oxygen Effect on Mechanical Properties -- I. Introduction -- II. Plastic Deformation and Dislocations in Silicon Crystals -- III. Influence of Dispersed Oxygen Atoms on the Mobility of Dislocations in Silicon -- IV. Immobilization of Dislocations by Oxygen -- V. Effect of Oxygen on Dislocation Generation -- VI. Mechanical Properties of Silicon as Influenced by Oxygen Impurities -- VII. Influence of Oxygen Precipitation on Mechanical Strength -- VIII. Effects of Nitrogen and Carbon Impurities on Mechanical Properties of Silicon -- IX. Summary -- References -- Chapter 12. Grown-in and Process-Induced Effects -- I. Introduction -- II. Oxygen Precipitation During High-Temperature Processes. , III. Grown-in Defects: Precipitation and Intrinsic Defect Aggregation During Crystal Growth -- IV. Summary -- References -- Chapter 13. Intrinsic/Internal Gettering -- I. lntroduction -- II. Surface and Interior Microdefects -- III. Gettering -- IV. Oxygen Behavior in Silicon -- V. Internal Gettering Process and Mechanism -- VI. Summary -- References -- Chapter 14. Oxygen Effect on Electronic Device Performance -- I. Introduction -- II . Device Characteristics and Crystal Defects -- III. Defect Generation -- IV. Improvement of Device Yield -- V. Summary -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series.

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Note: Förderkennzeichen BMWi 0325602A. - Verbund-Nummer 01141585 , Ein weiterer Autor wurde dem Berichtsblatt entnommen , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Mit deutscher und englischer Zusammenfassung

Note: Förderkennzeichen BMEL 22011410 [neu] - 10NR114 [alt]. - Verbund-Nummer 01094205 , "Zuwendungsempfänger: 1: TU Chemnitz, Professur Fördertechnik, Forschungsgruppe: Anwendungstechnik Erneuerbare Werkstoffe (AEW), 2: Institut für Holztechnologie Dresden, gemeinnützige GmbH (IHD), Ressort Werkstoffe" - Seite 2 , Literaturverzeichnis: Seite 114-118 , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Mit deutscher und englischer Zusammenfassung

Note: Front Cover -- Ultrafast Physical Processes in Semiconductors -- Copyright Page -- Contents -- Preface -- List of Contributors -- Chapter 1. Ultrafast Electron-Phonon Interactions in Semiconductors: Quantum Kinetic Memory Effects -- I. Introduction -- II. General Considerations -- III. Experimental Technique -- IV. Results and Discussion -- V. Conclusion -- References -- Chapter 2. Spatially and Temporally Resolved Near-Field Scanning Optical Microscopy Studies of Semiconductor Quantum Wires -- I. Introduction -- II. Semiconductor Nanostructures -- III. Near-Field Scanning Optical Microscopy -- IV. Stationary Near-Field Spectroscopy of Semiconductor Nanostructures -- V. Time-Resolved Near-Field Spectroscopy -- VI. Outlook and Conclusions -- References -- Chapter 3. Ultrafast Dynamics in Wide Bandgap Wurtzite GaN -- I. Introduction -- II. Raman Spectroscopy in Semiconductors -- III. Samples, Experimental Setup, and Approach -- IV. Phonon Modes in the Wurtzite Structure GaN -- V. Experimental Results -- VI. Conclusions and Future Experiments -- References -- Chapter 4. Ultrafast Dynamics and Phase Changes in Highly Excited GaAs -- I. Introduction -- II. Measuring Ultrafast Phenomena with Light -- III. Dynamics of Electrons and Atoms from Femtoseconds to Microseconds -- IV. Measuring the Time-Resolved Dielectric Function -- V. Time-Resolved Dielectric Function of Highly Excited GaAs -- VI. Carrier and Lattice Dynamics -- VII. Conclusions -- References -- Chapter 5. Quantum Kinetics for Femtosecond Spectroscopy in Semiconductors -- I. Introduction -- II. Semiconductor Bloch Equations for Pulse Excitation with Quantum Kinetic Scattering Integrals -- III. Low-Excitation Femtosecond Spectroscopy -- IV. Femtosecond DTS for Screened Coulomb and LO-Phonon Quantum Kinetic Scattering. , V. Resonant FWM with Screened Coulomb and LO-Phonon Quantum Kinetic Scattering -- References -- Chapter 6. Coulomb Correlation Signatures in the Excitonic Optical Nonlinearities of Semiconductors -- I. Introduction -- II. Theoretical Approach and Model -- III. Applications to Pump-Probe Spectroscopy -- IV. Absorption Changes Induced by Incoherent Occupations -- V. Applications to Four-Wave-Mixing Spectroscopy -- VI. Summary -- VII. Outlook -- References -- Chapter 7. Electronic and Structural Response of Materials to Fast, Intense Laser Pulses -- I. Introduction -- II. Tight-Binding Electron-Ion Dynamics -- III. ε (ω ) and χ(2) as Signatures of a Nonthermal Phase Transition -- IV. Detailed Information from Microscopic Simulations -- V. Formula for the Second-Order Susceptibility χ(2) -- VI. Response of Si to Fast, Intense Pulses -- VII. Density Functional Simulation for Si -- VIII. Response of C60 to Ultrafast Pulses of Low, High, and Very High Intensity -- IX. The Simplest System, H2+ -- X. Biological Molecules -- XI. Conclusion -- References -- Chapter 8. Coherent THz Emission in Semiconductors -- I. Introduction -- II. Principles of Pulsed THz Emission and Detection -- III. Macroscopic Currents and Polarizations -- IV. Coherent Charge Oscillations -- V. THz Emission from Quantum Structures -- VI. Applications in Semiconductor Spectroscopy -- VII. Conclusions -- References -- Index -- Contents of Volumes in This Series.