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How often is a perimesencephalic subarachnoid haemorrhage CT pattern caused by ruptured aneurysms? (1993)

Pinto, A. N. ; Ferro, J. M. ; Canhão, P. ; [et al.]

Springer

Acta neurochirurgica 124 (1993), S. 79-81

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ISSN: 0942-0940

Keywords: SAH ; intracranial aneurysm ; perimesencephalic subarachnoid haemorrhage ; posterior circulation ; CT

Source: Springer Online Journal Archives 1860-2000

Topics: Medicine

Notes: Summary Background Angiography is usually recomended in perimesencephalic subarachnoid haemorrhage (PM SAH) to rule out a basilar artery aneurysm. However it is not known how often aneurysms are found among patients with a CT pattern of PM haemorrhage or the frequency of this CT pattern after rupture of posterior circulation aneurysms. Method CTs of all SAH caused by posterior circulation aneurysms admited from 1/85 to 12/92 where reviewed by two examiners. Late (〉72 h) examinations were excluded. The remaining CTs were classified in perimesencephalic (PM) or non PM. Results 81 posterior circulation aneurysms were collected. Only one PM-like CT pattern was found, due to ruptured posterior communicating artery aneurysm (1.3%; 95% Cl (confidence intervals)=.03–6.7%). During the same period 37 PM SAH with negative angiographic results were admited. The likehood of finding an aneurysm in a patient with an early CT showing a PM distribution of haematic densities was 2.7% (95% Cl=.07–14%). Conclusion Although the probability of finding an aneurysm in a SAH patient with a PM CT pattern is low, a complete 4-vessel angiogram must be obtained.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01401126

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SnS—Sno2 conversion of chemically deposited SnS thin films (1992)

Nair, P. K. ; Nair, M. T. S. ; Campos, J. ; [et al.]

New York, NY [u.a.] : Wiley-Blackwell

Advanced Materials for Optics and Electronics 1 (1992), S. 117-121

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ISSN: 1057-9257

Keywords: Tin(II) sulphide ; Tin(IV) oxide ; Photoconductor ; Air annealing ; Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: The thermal decomposition of chemically deposited SnS thin films to SnO2 films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO2 film involves the creation of non-stoichiometric SnS, SnS + SnS2 mixed phase and non-stoichiometric SnO2 (i.e. SnO2 — x), as concluded from X-ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO2 thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 105 Ω/□ and an activation energy (Ea) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS2 phase to the non-stoichiometric SnO2 - x film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 109 Ω/□ with the value of Ea at 1.3 eV, indicating an improvement in the degree of stoichiometry.

Additional Material: 5 Ill.