ISSN:
1432-0630
Keywords:
85.30
;
81.10
;
73.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract GaAs MIS field effect transistors with a Ge3N4 dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in theI D -V Dcharacteristics. However, performance of the devices have been found to be limited by the contact resistance. FromI DS 1/2 -V G plot, the threshold voltage and effective channel mobility of the transistor have been obtained as -4.5V and 2800cm2v−1s−1, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617142
Permalink
