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  • 1
    Electronic Resource
    Electronic Resource
    Barrier-height non-uniformities of PtSi/Si(111) Schottky diodes (1995)
    Springer
    Applied physics 61 (1995), S. 369-375 
    Details
    ISSN: 1432-0630
    Keywords: 73.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The forward current-voltage characteristics of PtSi Schottky contacts on epitaxial n-type Si (111) is studied in the temperature range from 100 to 300 K. A current contribution in excess to that predicted by thermionic emission diffusion theory is caused by a few thousand patches of reduced Schottky barrier height in a device area of 3.14 mm2. The typical lateral extent of these patches is 70–250 nm. It correlates with the size of surface bumps observed. The number of patches is reduced upon increasing the silicidation temperature up toT siI=550°C. Possible non-uniformities of the typical crystallite grain size of 20 nm are not resolved due to effective pinch-off.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540110
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Tunneling current-voltage characteristics of Ti-silicide/p− Si/p+ Si Schottky diodes (1989)
    Springer
    Applied physics 48 (1989), S. 203-210 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 73.40 ; 73.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The tunneling current-voltage characteristics of Ti-silicide/p− Si/p+ Si Schottky diodes are analyzed to study the Ti/Si interface properties. By using an MBE-grown 7 nm p− Si spacer layer, well-defined tunneling structures are obtained. The sharply peaked density of states in a Ga-impurity band is used as a tunneling probe. A state density gap 100 meV around the Fermi energy is observed for a rapidly (20s) annealed (T=550°C) reacted sample. The gap is interpreted by a Ti-rich interfacial silicide film of about 1 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619386
    Location Call Number Limitation Availability
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    Paper (German National Licenses)
    Fulltext
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