ISSN:
1432-0630
Keywords:
72.20
;
85.30
;
81.10
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 Φ−1 cm−2, peak current densities of 28.5 A/cm2 and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00332217
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