ISSN:
1432-0630
Keywords:
72.20.Jv
;
71.55.-i
;
72.40.+w
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (λ=4 μm). Trapping time constants (τ=10 ns-100 μs) are resolved for the prevalent In acceptor (N In=1016–1017 cm−3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=1012–1014 cm−3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are σp=1×10−12, 1×10−14, 1×10−13, 2.5×10−13 cm2 for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324491
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