ISSN:
1432-0630
Keywords:
68.55.+b
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00343424
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