ISSN:
1432-0630
Keywords:
61.14
;
68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have investigated vibrational properties of silicon-nitride films, SiNx (0.3≤×≤1.33), produced by a non-thermal method using high-resolution electron energy loss spectroscopy. The results, based on a continuous random network model assuming a planar XY3 vibrational bond unit, show that the Si-N bonds in the films closely resemble those in typical thermal silicon nitride although nitrogens occupy some metastable binding sites. We estimate force constants of the restoring forces for a Si3N bond unit, which tend to increase gradually with increasing nitrogen content x. In particular, the central force constant k1 for the in-plane stretching mode of silicon atoms varies with x in the range 297≤k≤331 N/M, larger than the theoretical value for a nitrogen atom imbedded in a pure Si crystal.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331727
Permalink
