ISSN:
1432-0630
Keywords:
61.70
;
61.60
;
78.70
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The positron lifetime in electron-irradiated undoped and doped silicon crystals is studied as a function of temperature between 90 and 300 K. We show that the temperature dependence of the two lifetime components does not arise from the escape, but from the trapping rate at defects. The temperature dependences of the capture cross sections are deduced. It is concluded that in undoped crystals the positrons interact with negatively charged and neutral defects, probably divacancies and vacancy-oxygen complexes, respectively. In strongly P-doped crystals positron trapping occurs preferably in negatively charged centers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00901067
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