In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 2 ( 1994-03-01), p. 278-281
Abstract:
The use of synchrotron radiation to convert diethylzinc and diethyltelluride molecules into ZnTe has been employed for ZnTe growth. The formation of ZnTe epitaxial layer on (100) oriented GaAs substrate at room temperature is experimentally demonstrated. It is shown by x-ray photoelectron spectroscopy that no carbon is included in the film.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1994
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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