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  • Physics  (4)
  • UA 4921  (4)
  • 1
    Online Resource
    Online Resource
    SiO2 etch characteristics and environmental impact of Ar/C3F6O chemistry
    American Vacuum Society ; 2018
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 36, No. 6 ( 2018-11-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 36, No. 6 ( 2018-11-01)
    Abstract: Perfluorocarbon gases are commonly used for nanoscale etching in semiconductor processing; however, they have the disadvantages of a long lifetime and inducing global warming effects when released into the atmosphere. In this study, the SiO2 etch characteristics and global warming effects of C3F6O gas chemistry, which has a low global warming potential, were compared with those of C4F8 chemistry, which is commonly used in semiconductor processing. Using Ar/C3F6O, the SiO2 etch rate was higher and the etch selectivity of SiO2 over the amorphous carbon hardmask layer was lower than the etch rate and etch selectivity using Ar/C4F8/O2, with all other etch conditions the same. Furthermore, using Ar/C3F6O exhibited more anisotropic SiO2 etch profiles by suppressing the bowing, narrowing, and necking effects compared to the etch profiles using Ar/C4F8/O2. The global warming effects were evaluated by calculating the million metric ton carbon equivalents (MMTCEs) from the volumetric concentrations of the emitted by-product species and process gases, and the results showed that, in the optimized conditions, Ar/C3F6O exhibited a lower environmental impact with an MMTCE of & lt;24% than that of Ar/C4F8/O2. Therefore, it is suggested that the Ar/C3F6O gas mixture is a potential replacement for Ar/C4F8/O2 because of its lower MMTCE and acceptable SiO2 etch characteristics.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.5027446
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2018
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Ferroelectric properties of Pb(Zr, Ti)O3 thin films deposited on annealed IrO2 and Ir bottom electrodes
    American Vacuum Society ; 1999
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 17, No. 5 ( 1999-09-01), p. 2939-2943
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 17, No. 5 ( 1999-09-01), p. 2939-2943
    Abstract: Ferroelectric fatigue and hysteresis of reactively sputtered Pb(Zr, Ti)O3 (PZT) thin films were investigated by annealing IrO2 and Ir bottom electrodes at various temperatures. These electrodes were annealed to change their crystallinity and surface morphology in O2 or N2 atmosphere, respectively. There was no appreciable roughening of the PZT/IrO2 interface respective to that of the PZT/Ir; the rms roughness of IrO2 and Ir annealed at 650 °C was about 3.5 and 10 nm, respectively. The ferroelectric properties of the PZT/IrO2 were found to be overall better than those of the PZT/Ir. The PZT/IrO2 thin films exhibited very small fatigue up to 1011 cycles; the P*r-P∧r value decreased only from 16.6 to 14 μC/cm2 until 1012 polarization reversals. This is due to the excellent diffusion barrier property of IrO2 and the smooth PZT/IrO2 interface. On the other hand, although thin IrO2 layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after 109 polarization reversals.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.581964
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1999
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    Roll-to-roll sputtered Si-doped In2O3/Ag/Si-doped In2O3 multilayer as flexible and transparent anodes for flexible organic solar cells
    American Vacuum Society ; 2015
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 33, No. 2 ( 2015-03-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 33, No. 2 ( 2015-03-01)
    Abstract: Amorphous Si-doped In2O3 (a-ISO), crystalline Ag, and a-ISO layers were sputtered onto a flexible polyethylene terephthalate substrate by using a lab-scale roll-to-roll (RTR) sputtering system. The resulting a-ISO/Ag/a-ISO multilayer was studied to optimize their characteristics for use as flexible and transparent anodes in flexible organic solar cells (FOSCs). To optimize the electrical and optical properties of the a-ISO/Ag/a-ISO multilayer, the thicknesses of each a-ISO and Ag layer were varied by controlling the DC power applied on ISO and Ag targets during the RTR sputtering process. Compared to the top and bottom a-ISO layer, controlling the thickness of the Ag layer is more effective for realizing a low sheet resistance and high transmittance a-ISO/Ag/a-ISO multilayer. At optimized thicknesses of a-ISO (30 nm) and Ag (10 nm), a symmetric a-ISO/Ag/a-ISO multilayer showed a sheet resistance of 5.256 Ω/sq and a high optical transmittance of 83.9%. Various bending test results showed that the high failure strain of the Ag interlayer led to good flexibility of the multilayer films. Furthermore, the authors discuss the effect of each a-ISO and Ag layer thickness on the performance of FOSCs fabricated on RTR-sputtered a-ISO/Ag/a-ISO anodes.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4901875
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2015
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    Phase transition characteristics under vacuum of 9,10-di(2-naphthyl)anthracene for organic light-emitting diodes
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 32, No. 2 ( 2014-03-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 32, No. 2 ( 2014-03-01)
    Abstract: The phase transition characteristics of 9,10-di(2-naphthyl)anthracene (ADN), an organic light emitting diode (OLED) material, are evaluated under vacuum. The phase transition is indicated by a plateau in the temperature curve of the ADN upon heating to its melting or sublimation temperature under pressure in a vacuum chamber. The melting temperature of the ADN at 1 atm pressure is verified by differential scanning calorimetry. The boiling temperature decreases by a few degrees as the vacuum chamber is evacuated from 1 atmosphere, and the material sublimes below 1 Torr. The sublimation temperature also decreases slightly as the pressure is lowered. Our results provide not only the optimal evaporation conditions for ADN but also information on the thermal stability of ADN and other types of organic materials for OLEDs under high vacuum.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4831935
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
    Location Call Number Limitation Availability
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