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  • Physics  (3)
  • UA 4381.B  (3)
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  • Physics  (3)
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  • UA 4381.B  (3)
  • 1
    Online Resource
    Online Resource
    World Scientific Pub Co Pte Ltd ; 2002
    In:  International Journal of Modern Physics B Vol. 16, No. 06n07 ( 2002-03-20), p. 993-997
    In: International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 16, No. 06n07 ( 2002-03-20), p. 993-997
    Abstract: In our study, diamond-like-carbon (DLC) thin films were prepared by filtered arc deposition (FAD), which provided a way to deposit DLC thin films on large areas at room temperature. Glass slides coated 100nm chromium or titanium thin films were used as cathode substrates. Millions of rectangular holes with sizes of 5 × 5μm were made on the DLC films using a routine patterning process. Here a special reactive ion beam etching method was applied to etch the DLC films. The anodes of the devices were made by electrophoretic deposition. ZnO:Zn phosphor (P15) was employed, which has a broad band bluish green (centered at 490nm). Before electrophoretic deposition, the anode substrates (ITO glass slides) had been patterned into 50 anode electrodes. In order to improve the adherence of phosphor layers, the as-deposited screens were treated in Na 2 SiO 3 solution for 24h to add additional binder. A kind of matrix-addressed diode FED prototype was designed and packaged. 50-100μm-thick glass slides were used as spacers and getters were applied to maintain the vacuum after the exhaustion. The applied DC voltage was ranged in 0-3000V and much higher current density was measured in the cathode-patterned prototypes than the unpatterned ones during the test. As a result, characters could be well displayed.
    Type of Medium: Online Resource
    ISSN: 0217-9792 , 1793-6578
    RVK:
    Language: English
    Publisher: World Scientific Pub Co Pte Ltd
    Publication Date: 2002
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  • 2
    Online Resource
    Online Resource
    World Scientific Pub Co Pte Ltd ; 1987
    In:  International Journal of Modern Physics B Vol. 01, No. 02 ( 1987-06), p. 327-330
    In: International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 01, No. 02 ( 1987-06), p. 327-330
    Abstract: Single crystals of Y-Ba-Cu-O type superconductors having the typical dimension 0.5 to 1 mm in the plane of the plate have been prepared. The analysis of compositions show that they correspond to YBa 2 Cu 3 O 9−δ . Laue photographs, which prove the samples to be single crystals, show some diffraction spots instead of rings. The measurement of susceptibility and other measurements have been performed.
    Type of Medium: Online Resource
    ISSN: 0217-9792 , 1793-6578
    RVK:
    Language: English
    Publisher: World Scientific Pub Co Pte Ltd
    Publication Date: 1987
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  • 3
    Online Resource
    Online Resource
    World Scientific Pub Co Pte Ltd ; 2013
    In:  International Journal of Modern Physics B Vol. 27, No. 27 ( 2013-10-30), p. 1350172-
    In: International Journal of Modern Physics B, World Scientific Pub Co Pte Ltd, Vol. 27, No. 27 ( 2013-10-30), p. 1350172-
    Abstract: The threshold source-drain voltage for the kink occurring in 130 nm GaAs devices is found to be linear dependent on the temperature in experiments. And the source-drain current after kink is also observed to be linearly dependent on the reciprocal of the source-drain voltage. A physical model of source-drain current including multi-valley transport for arbitrary doping and uniform doping GaAs has been proposed to explain such experimental phenomenon. Multi-valley electron transport origins from electrons getting the energy higher than the energy difference between the valleys from the channel electric field due to channel length shorter than the free-length for nano- GaAs devices. High energy electrons due to ballistic transport leads to a redistribution channel electron in different valleys and high energy electrons have a larger probability to occupy the states in upper valley because the density of states of the upper valley is about 70 times larger than that of the lower valley, leads to the carrier density in L valley being comparable with that in Γ valley in the channel, lastly kinks occurs.
    Type of Medium: Online Resource
    ISSN: 0217-9792 , 1793-6578
    RVK:
    Language: English
    Publisher: World Scientific Pub Co Pte Ltd
    Publication Date: 2013
    Location Call Number Limitation Availability
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