In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 5L ( 2005-05-01), p. L658-
Abstract:
The influence of two k · p formalisms, namely, the realistic 8-band and 10-band models, on the conduction and valence band structures of a 7 nm In x Ga 1- x As 1- y N y /GaAs quantum well (QW) has been investigated. It is discovered that at high indium composition (35%), the energy dispersion curves calculated by the 8-band model, using electron effective mass ( m e * ) predicted by band-anticrossing (BAC) model, agrees very well with the results of 10-band model near the Brillouin zone center. However, at lower indium composition (15%), larger deviation of excited state energy level, such as e 2, is found. In contrast to the previous reports that assume great enhancement of m e * even at indium of 30–40%, m e * extrapolated from the BAC model predicted a more modest enhancement that is weakened as the indium composition in the well layer is being increased.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L658
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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