In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6916-
Abstract:
In this study, 0.3–0.5 µm deep silicon trenches were etched using Cl 2 /10%N 2 and Cl 2 /50%HBr inductively coupled
plasmas, and the defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. High resolution transmission
electron microscopy was used to investigate the degree of remaining defects and X-ray photoelectron spectroscopy was also used to investigate surface contamination of the etched silicon wafers.
Defects were found on the silicon trench surfaces etched using both Cl 2 /10%N 2 and Cl 2 /50%HBr.
A thermal oxidation of 200 Å at the temperature up to 1,100°C did not remove the remaining defects completely and more defects were remained on the silicon trench etched using Cl 2 /10%N 2 . More defects
remaining on the oxidized silicon trench for Cl 2 /10%N 2 appear to be related to the formation of silicon
oxynitride on the silicon trench etched in Cl 2 /10%N 2 , therefore, forming less thermal oxide during the
oxidation process. The annealing of the etched silicon trenches from 900°C to 1,000°C for 30 min in N 2 also
decreased the number of defects, however, to remove the defects formed in our experiments, the annealings at the temperature higher than 1,000°C in N 2 for 30 min appears to be required. A combination process of
annealing at 1,000°C and oxidation at 900°C was also effective in removing the defects completely.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6916
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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