In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 4 ( 2016-04-01), p. 043005-
Abstract:
The sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.043005
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
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