In:
Applied Physics Express, IOP Publishing, Vol. 14, No. 1 ( 2021-01-01), p. 016502-
Kurzfassung:
This paper demonstrates highly efficient GaN high-electron-mobility transistors (HEMTs) on GaN substrates with reduced interface contamination. By applying a hydrofluoric acid-based pre-growth treatment to a GaN substrate, the Si impurity concentration at the interface between the GaN substrate and the epitaxial layer can successfully be reduced. RF performance was enhanced by pre-growth treatment owing to the suppression of Si-induced parasitic loss. As a result, GaN HEMTs on GaN substrates exhibited an excellent power-added efficiency of 82.8% at a 2.45 GHz. To the best of our knowledge, this exceeds that of the previously reported discrete GaN HEMTs at around this frequency range.
Materialart:
Online-Ressource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/abc1cc
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2021
ZDB Id:
2417569-9
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