In:
Applied Physics Letters, AIP Publishing, Vol. 100, No. 14 ( 2012-04-02)
Abstract:
Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450 °C, x-ray absorption spectroscopy analyses indicate that crystal field splitting in the conduction band begins to take place at this temperature. Such molecular orbital ordering effects induce a semiconducting behavior, which is manifested by working thin film transistor devices with field effect mobility values as high as 0.64 cm2/Vs. X-ray photoelectron spectroscopy studies disclose a drastic increase in Nb+5 states upon heat treatment, and these may be attributed to oxygen deficient states that generate free electrons.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink