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  • Physics  (1,172)
  • UA 1000  (1,172)
  • 1
    Online Resource
    Online Resource
    Impact of parton rescattering on analysis of p + p collision data at LHC energies
    Elsevier BV ; 2011
    In:  Physics Letters B Vol. 694, No. 4-5 ( 2011-01), p. 435-439
    Details
    In: Physics Letters B, Elsevier BV, Vol. 694, No. 4-5 ( 2011-01), p. 435-439
    Type of Medium: Online Resource
    ISSN: 0370-2693
    URL: Article
    DOI: 10.1016/j.physletb.2010.10.012
    RVK:
    UA 1000
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2011
    detail.hit.zdb_id: 1466612-1
    detail.hit.zdb_id: 208866-6
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  • 2
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    Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 4 ( 2023-07-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 4 ( 2023-07-24)
    Abstract: Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0163034
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
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    Interlayer coupling in intrinsically magnetic bilayer ScO2 and NbN2
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 8 ( 2020-02-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 8 ( 2020-02-24)
    Abstract: Two-dimensional (2D) van der Waals (vdW) intrinsic magnets have been used to fabricate spin filter magnetic tunnel junctions and spin tunnel field-effect transistors, and the interlayer coupling of 2D vdW intrinsic magnets is of vital importance for obtaining high performance vdW spintronic devices based on 2D materials. In this work, we investigate the electronic structures and magnetic properties of bilayer ScO2 and NbN2 by using first principles calculations. It is found that AB stacking is the most preferred stacking order of bilayer ScO2 and NbN2. Furthermore, the ground state of AB-stacked bilayer ScO2 is a semiconductor with intralayer ferromagnetic (FM) and interlayer antiferromagnetic (AFM) couplings, and the magnetic moments are mainly provided by the pz orbits of the O atoms. In contrast, the ground state of AB-stacked bilayer NbN2 is a metal with intra- and inter-layer FM couplings, and the magnetic moments are mainly from the dz2 orbits of the Nb atoms. In particular, the interlayer AFM coupling of AB-stacked bilayer ScO2 is much larger than intralayer FM coupling due to the superposition of the spin-polarized pz orbits of the O atoms in adjacent layers. Compared to the strong interlayer AFM coupling of bilayer ScO2, the interlayer magnetic coupling of AB-stacked bilayer NbN2 is negligible because the spin-polarized dz2 orbits of the Nb atoms in adjacent layers do not overlap. Our results will benefit a deep understanding of the interlayer coupling of 2D vdW intrinsic magnets and exploring of high performance spintronic devices based on 2D vdW intrinsic magnets.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5141036
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
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  • 4
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    Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li0.5CrI3 and CrI3
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 117, No. 2 ( 2020-07-13)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 117, No. 2 ( 2020-07-13)
    Abstract: Two-dimensional (2D) intrinsic magnets have been used to construct magnetic tunnel junctions (MTJs) with a high tunneling magnetoresistance (TMR) ratio, including van der Waals (vdW) MTJs and lateral MTJs. In this work, we design vdW and lateral MTJs formed by a ferromagnetic (FM) CrI3 barrier and two half-metallic Li0.5CrI3 electrodes, respectively, and investigate the TMR effect of these MTJs using the non-equilibrium Green's function combined with density functional theory. Interestingly, it is found that due to the half-metallicity of the Li0.5CrI3 electrode, the total conductances of vdW and lateral MTJs for the parallel configuration (PC) of magnetizations of two electrodes are about 12 and 11 orders of magnitude larger than those for the antiparallel configuration (APC) of magnetizations of two electrodes, respectively. Consequently, the ultrahigh TMR ratios of up to 1.48 × 1014 and 2.86 × 1012 are achieved in the designed vdW and lateral MTJs, respectively. Remarkably, the TMR ratio of 1.48 × 1014 is the highest ratio in MTJs based on 2D materials. Moreover, due to the CrI3 barrier in vdW MTJs becoming FM half-metal, the majority-spin conductance of vdW MTJs for PC of magnetizations of two electrodes is about 2 orders of magnitude larger than that of lateral MTJs, and thus, the TMR ratio of vdW MTJs is about 2 orders of magnitude larger than that of lateral MTJs. Our results suggest that vdW and lateral MTJs formed by the FM CrI3 barrier and half-metallic Li0.5CrI3 electrodes hold great potential for applications in spintronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0013951
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
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  • 5
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    Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 98, No. 4 ( 2011-01-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 98, No. 4 ( 2011-01-24)
    Abstract: A monolayer electroluminescence (EL) device with ZnS quantum dots (QDs) as emitting layer was fabricated by spin-coating technique. Continuously tunable EL spectra from ZnS QDs are observed at room temperature. By increasing excitation voltage, the EL spectra can be tuned from yellow green (560 nm) to blue (470 nm), corresponding to chromaticity coordinates from (0.45, 0.52) to (0.22, 0.26). In order to understand the mechanism of the device, the dependences of the photoluminescence of the ZnS QDs on temperature, excitation energy, and particle size have been studied, respectively, which indicates that the possible mechanisms of tunable EL spectra are related to selective excitation of QDs with different particle sizes.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3544570
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
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  • 6
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    Direct observation of spin polarization in epitaxial Fe3O4(001)/MgO thin films grown by magnetron sputtering
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 18 ( 2022-05-02)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 18 ( 2022-05-02)
    Abstract: We obtained epitaxial single-crystal Fe3O4(001)/MgO(001) thin films by magnetron sputtering. The high quality of the grown Fe3O4 films was confirmed by reflection high-energy electron diffraction and x-ray photoelectron spectroscopy. Atomic magnetic properties of Fe3O4(001)/MgO(001) were investigated using vibrating sample magnetometry and x-ray magnetic circular dichroism. The values of saturation magnetization and magnetic moment are 407 ± 5 emu/cm3 (3.26 ± 0.04 μB/(f.u.)) and 3.31 ± 0.15 μB/(f.u.), respectively, in the Fe3O4 film as thin as 5 nm, which are close to the bulk values. The spin polarization was directly measured using spin-resolved photoemission spectroscopy. The measured spin polarization has a maximum value of −42% ± 3%, which is comparable to the theoretical value for the (2 × 2)R45° reconstructed Fe3O4(001) surface. Furthermore, the film thickness-dependent measurements indicate that the anti-phase boundaries significantly decrease the spin polarization rather than the lattice mismatch. Our results demonstrate that epitaxial Fe3O4(001)/MgO thin films grown by magnetron sputtering have desired magnetic properties, facilitating the potential application of Fe3O4-based spintronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0091241
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
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  • 7
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    Online Resource
    Paramagnetic anisotropy of Co-doped ZnO single crystal
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 89, No. 11 ( 2006-09-11)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 89, No. 11 ( 2006-09-11)
    Abstract: Zn 0.95 Co 0.05 O single crystal was obtained through hydrothermal crystal growth method. Extended x-ray absorption fine structure and x-ray absorption near-edge structure spectra as well as UV absorption measurements reveal that Co2+ ions have substituted Zn2+ ions and incorporated into ZnO lattice. The single crystal shows typical paramagnetic property from 2to300K. A paramagnetic anisotropy property in the crystal is found. The single ion anisotropy origin from tetrahedral coordination Co in the ZnO lattice was introduced to explain the phenomena. This work verified the paramagnetic anisotropy phenomena in ZnO–Co.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2352726
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
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  • 8
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    Electronic structure and thermoelectric performance of Zintl compound Sr3GaSb3: A first-principles study
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 1 ( 2014-01-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 1 ( 2014-01-06)
    Abstract: By using first-principles method and Boltzmann theory, we simulated the thermoelectric transport properties of p-type and n-type Sr3GaSb3. It is found that the thermoelectric figure-of merit (ZT) of n-type Sr3GaSb3 is probably better than that of p-type, mainly due to its large band degeneracy. Moreover, a high ZT value of 1.74 at 850 K can be achieved for n-type Sr3GaSb3 along the yy direction, corresponding to the carrier concentration 3.5 × 1020 e cm−3. We propose that the high ZT value of experimentally synthesized p-type Sr3GaSb3 is originated from appearing of the larger number of band valley on the top of valence bands.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4860996
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
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  • 9
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    Theoretical analysis for the apparent discrepancy between p ¯ p and pp data in charged particle forward–backward multiplicity correlations
    Elsevier BV ; 2008
    In:  Physics Letters B Vol. 660, No. 5 ( 2008-03), p. 478-482
    Details
    In: Physics Letters B, Elsevier BV, Vol. 660, No. 5 ( 2008-03), p. 478-482
    Type of Medium: Online Resource
    ISSN: 0370-2693
    URL: Article
    DOI: 10.1016/j.physletb.2008.01.048
    RVK:
    UA 1000
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2008
    detail.hit.zdb_id: 1466612-1
    detail.hit.zdb_id: 208866-6
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  • 10
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    Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 113, No. 7 ( 2018-08-13)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 113, No. 7 ( 2018-08-13)
    Abstract: Thin metal interfacial layers (1-nm-thick Ti and Hf) were exploited as the appropriate interfacial layer for forming an interfacial (buffer) layer between the 10-nm-thick Ta2O5 resistance switching layer and the Ta electrode to enhance the switching cycle endurance and uniformity. The thin metal interfacial layers were in-situ oxidized to TiOx (x  & lt; 2) and HfO2 layers, respectively, during the ion beam sputter deposition on the Ta2O5 layer. Compared with the devices with no interfacial layers, the switching uniformity was improved for both interfacial layers, with Ti showing the greatest improvement. The switching cycle endurance was largely degraded for the HfO2 interfacial layer, whereas the TiOx interfacial layer greatly improved in such aspects. The appropriate level of Ti-O bond energy and an excessively high Hf-O bond energy were suggested as the main reasons for such a critical difference.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5040430
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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