In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 15, No. 11 ( 2021-11)
Abstract:
The development of advanced transparent electrical devices has created an urgent demand for wide‐bandgap transparent semiconductors. Herein, a simple, low‐cost ink‐based method for preparation of LaCuOS is introduced. High transmittances of above 60% and 65% at visible (380–750 nm) and mid‐infrared (3–5 μm) wavelengths, respectively, are obtained with LaCuOS films prepared using this ink. With these films, the carrier concentration is above 10 18 cm −3 , while a conductivity of 5 S cm −1 is obtained, electrical properties that are both higher than those of most transparent p‐type semiconductors. From density functional theory calculations, it is surmised that the improved conductivity of the LaCuOS is a result of its high carrier concentration, and its hole effective mass, which is smaller than that of typical transparent p‐type semiconductors.
Type of Medium:
Online Resource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.202100273
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
2259465-6
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