In:
physica status solidi (b), Wiley, Vol. 247, No. 6 ( 2010-06), p. 1472-1475
Abstract:
The growth of Mg x Zn 1− x O films of both polar and nonpolar orientation in was successfully carried out by remote‐plasma‐enhanced MOCVD (RPE‐MOCVD) technique. The polar face of as‐grown film had a vertically aligned columnar growth with respect to the sapphire (11–20) substrate. These columns had an average diameter of about 40 nm. In contrast, the nonpolar face of as‐grown film had a sword‐shape lying with an average width of 250 nm on the sapphire (10–12) substrate. Au/Schottky diodes (SDs) were fabricated on both polar face of c ‐plane (0001) Mg x Zn 1− x O and nonpolar face of a ‐plane (11–20) Mg x Zn 1− x O. A rectifying behavior had been achieved and a series resistance was increased with Mg contents in both polar and nonpolar diodes. A residual electron concentration was decreased with the Mg content from 3 × 10 17 cm −3 at x = 0 to 1.2 × 10 16 cm −3 at x = 0.18 in the case of nonpolar films.
Type of Medium:
Online Resource
ISSN:
0370-1972
,
1521-3951
DOI:
10.1002/pssb.200983227
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
208851-4
detail.hit.zdb_id:
1481096-7
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