In:
physica status solidi c, Wiley, Vol. 9, No. 6 ( 2012-06), p. 1356-1360
Abstract:
We have characterized the interface states of Al 2 O 3 /GaN and Al 2 O 3 /AlGaN/GaN structures prepared by atomic layer deposition using the conventional and photo‐assisted capacitance‐voltage ( C–V ) measurements. In order to control the interface states, an N 2 O‐radical treatment was applied to the GaN and AlGaN surfaces prior to the deposition of the Al 2 O 3 layer. We observed good C–V behavior and a relatively low density of interface states for the N 2 O‐radical treated Al 2 O 3 /GaN structure. To estimate the state density distributions at the Al 2 O 3 /AlGaN interface, we applied the photo‐assisted C–V measurement to the Al 2 O 3 /AlGaN/GaN heterostructures. The present Al 2 O 3 /AlGaN structre showed higher interface state densities than the Al 2 O 3 /GaN structure. However, we found that the N 2 O‐radical treatment is effective in reducing the density of interface states at the Al 2 O 3 /GaN and Al 2 O 3 /AlGaN systems (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.201100656
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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