In:
Zeitschrift für Naturforschung A, Walter de Gruyter GmbH, Vol. 46, No. 11 ( 1991-11-1), p. 955-966
Abstract:
Thermal oxidation of silicon is described as a three-component thermodynamic local process involving silicon, silicon oxide, and oxygen molecules. A simplified system of model equations is used to demonstrate the evoluton of the Si-SiO 2 interface. For the one-dimensional case the equivalence with the model of Deal and Grove could be shown analytically. For that purpose effective interface coordinates have been introduced which establish the connection between the conventional concept of sharp interfaces and our "diffusive" interface, i.e., a transition region between pure silicon and pure silicon oxide.
Type of Medium:
Online Resource
ISSN:
1865-7109
,
0932-0784
DOI:
10.1515/zna-1991-1106
Language:
English
Publisher:
Walter de Gruyter GmbH
Publication Date:
1991
detail.hit.zdb_id:
2079610-9
detail.hit.zdb_id:
124634-3
detail.hit.zdb_id:
124633-1
detail.hit.zdb_id:
2767412-5
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