In:
Pure and Applied Chemistry, Walter de Gruyter GmbH, Vol. 89, No. 4 ( 2017-04-01), p. 419-428
Abstract:
20BaO·5ZnO·5Fe 2 O 3 ·70V 2 O 5 glass annealed at 450°C for 30 min showed a marked decrease in the electric resistivity ( ρ ) from 4.0×10 5 to 4.8 Ωcm, while 20BaO·5Cu 2 O·5Fe 2 O 3 ·70V 2 O 5 glass from 2.0×10 5 to 5.0 Ωcm. As for the conduction mechanism, it proved that n-type semiconductor model in conjugation with the small polaron hopping theory was most probable. Since Zn II and Cu I have a 3d 10 -electron configuration in the outer-most orbital, Ga 2 O 3 - and GeO 2 -containing vanadate glasses were explored in this study. 20BaO·5Ga 2 O 3 ·5Fe 2 O 3 ·70V 2 O 5 glass showed a less remarkable decrease of ρ from 4.5×10 5 to 100 Ωcm, and 20BaO·5GeO 2 ·5Fe 2 O 3 ·70V 2 O 5 glass from 3.3×10 6 to 400 Ωcm. Activation energies for the conduction ( E a ) of GeO 2 - and Ga 2 O 3 -contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller E a value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.
Type of Medium:
Online Resource
ISSN:
1365-3075
,
0033-4545
DOI:
10.1515/pac-2016-0916
Language:
English
Publisher:
Walter de Gruyter GmbH
Publication Date:
2017
detail.hit.zdb_id:
2022101-0
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